Surface-morphology evolution during growth-interrupt in situ annealing on GaAs(110) epitaxial layers

Journal of Applied Physics

Volumn 101, Issue 10, 2007, Pages

  Yoshita, Masahiro ^a   Akiyama, Hidefumi ^a,b   Pfeiffer, Loren N ^b   West, Ken W ^b  

^a UNIVERSITY OF TOKYO   (Japan)

^b LUCENT TECHNOLOGIES   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ADATOM MIGRATION; ATOM DESORPTION; SURFACE COVERAGE;

ANNEALING; ATOMIC FORCE MICROSCOPY; EPITAXIAL LAYERS; MOLECULAR BEAM EPITAXY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

SURFACE MORPHOLOGY;

EID: 34249941043     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2733763     Document Type: Article

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