Effects of antimony and ion damage on carrier localization in molecular-beam-epitaxy-grown GaInNAs

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 23, Issue 3, 2005, Pages 1320-1323

  Bank, S R ^a   Wistey, M A ^a   Yuen, H B ^a   Lordi, V ^a   Gambin, V F ^a   Harris, J S ^a  

^a STANFORD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CARRIER LOCALIZATION; LOW-TEMPERATURE LOCALIZATION; PLASMA-RELATED DEFECTS;

CARRIER CONCENTRATION; MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; PLASMAS; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR QUANTUM WELLS;

ANTIMONY;

EID: 31144471058     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: 10.1116/1.1878995     Document Type: Conference Paper

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