Tuning the electro-optical properties of germanium nanowires by tensile strain

Nano Letters

Volumn 12, Issue 12, 2012, Pages 6230-6234

  Greil, J ^a   Lugstein, A ^a   Zeiner, C ^a   Strasser, G ^a   Bertagnolli, E ^a  

^a VIENNA UNIVERSITY OF TECHNOLOGY   (Austria)

Author keywords

bandgap modification; Germanium; nanowire; piezoresistivity; strain

Indexed keywords

BAND-GAP MODIFICATION; BULK GERMANIUM; ELECTRO-OPTICAL; ELECTROOPTICAL PROPERTIES; EXPERIMENTAL EVIDENCE; GERMANIUM NANOWIRES; GROWTH DIRECTIONS; HIGH STRAINS; MICRO-MECHANICAL; MONOLITHICALLY INTEGRATED; OPTICAL CHARACTERIZATION; OPTICAL EFFECTS; PHOTOCURRENT SPECTRUM; PIEZORESISTIVE COEFFICIENTS; PIEZORESISTIVITY; RED SHIFT; ROOM TEMPERATURE; SINGLE-CRYSTALLINE; STRAIN CONDITIONS; UNIAXIAL STRESS; VAPOR-LIQUID-SOLID;

CHARACTERIZATION; FIELD EFFECT TRANSISTORS; MONOLITHIC INTEGRATED CIRCUITS; NANOWIRES; OPTICAL PROPERTIES; OPTOELECTRONIC DEVICES; STRAIN; TENSILE STRAIN; VAPORS;

GERMANIUM;

EID: 84870860283     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl303288g     Document Type: Article

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