Fabrication of GaAs quantum dots by modified droplet epitaxy

Japanese Journal of Applied Physics, Part 2: Letters

Volumn 39, Issue 2, 2000, Pages

  Watanabe, Katsuyuki ^a,b   Koguchi, Nobuyuki ^a,b   Gotoh, Yoshihiko ^b  

^a NATIONAL INSTITUTE FOR MATERIALS SCIENCE   (Japan)

^b TOKYO UNIVERSITY OF SCIENCE   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

MOLECULAR BEAM EPITAXY; PHOTOLUMINESCENCE; SEMICONDUCTING ALUMINUM COMPOUNDS; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH;

DROPLET EPITAXY; SELF-ORGANIZED QUANTUM DOTS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 0342758562     PISSN: 00214922     EISSN: None     Source Type: Journal    
DOI: 10.1143/jjap.39.l79     Document Type: Article

References (11)

1. T. Utsumi: IEEE Trans. Electron Devices 38 (1991) 2275.
2. T. H. P. Chang et al.: J. Vac. Sci. Technol. B 9 (1991) 438.
3. H. H. Busta, J. E. Pogemiller and B. J. Zimmerman: J. Micromech. Microeng. (1993) 45.
4. H. H. Busta, R. R. Shadduck and W. Orvis: IEEE Trans. Electron Devices 36 (1989) 2679.
5. J. Van der Weide and R. J. Nemanich: J. Vac. Sci. Technol. B 12 (1994) 2475.
6. N. S. Xu, R. V. Latham and Y. Tzeng: Electron. Lett. 29 (1993) 1596.
7. C. Wang, A. Garcia, D. C. Ingram, M. Lake and M. E. Kordesch: Electron. Lett. 27 (1991) 1459.
8. J. C. She, S. E. Huq, J. Chen, S. Z. Deng and N. S. Xu: J. Vac. Sci. Technol. B 17 (1999) 592.
9. T. K. Ku, M. S. Chen, C. C Wang, W. F. Lee, M. S. Feng, I. J. Hsieh, C. M. Huang and H. C. Cheng: Proc. Int. Electron Devices and Materials Symp. Taiwan, 1994, p11-36-136.
10. T. K. Ku, M. S. Chen, C. C. Wang, M. S. Feng, I. J. Hsieh, C. M. Huang and H. C. Cheng: Jpn. J. Appl. Phys. 34 (1995) 5789.
11. P. Sander, U. Kaiser, M. Altebockwinkel, L. Wiedmann, A. Beninghoven, R. E. Sah and P. Koidl: J. Vac. Sci. Technol. A 5 (1987) 1470.