Two-dimensional electron gas formation in undoped In0.75Ga 0.25As/In0.75Al0.25As quantum wells

Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

Volumn 22, Issue 2, 2004, Pages 702-706

  Capotondi, F ^a,d   Biasiol, G ^a   Vobornik, I ^a   Sorba, L ^a,d   Giazotto, F ^b   Cavallini, A ^c   Fraboni, B ^c  

^a LABORATORIO TASC   (Italy)

^b SCUOLA NORMALE SUPERIORE   (Italy)

^c UNIVERSITY OF BOLOGNA   (Italy)

^d UNIVERSITY OF MODENA AND REGGIO EMILIA   (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; CARRIER CONCENTRATION; COMPUTER SIMULATION; DEEP LEVEL TRANSIENT SPECTROSCOPY; ELECTRIC INSULATING MATERIALS; ELECTRON GAS; ELECTRON MOBILITY; ENERGY GAP; FERMI LEVEL; HETEROJUNCTIONS; INDIUM ALLOYS; MOLECULAR BEAM EPITAXY; PARAMAGNETISM; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR GROWTH; X RAY DIFFRACTION ANALYSIS;

CONDUCTION BANDS; PHOTOEMISSION SPECTROSCOPY; POISSON-SCHRÖDINGER SIMULATION; TWO-DIMENSIONAL ELECTRON GASES (2DEG);

SEMICONDUCTOR QUANTUM WELLS;

EID: 2342511529     PISSN: 10711023     EISSN: None     Source Type: Journal    
DOI: None     Document Type: Article

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