Resistive switching AlOx-based memory with CNT electrode for ultra-low switching current and high density memory application

Digest of Technical Papers - Symposium on VLSI Technology

Volumn , Issue , 2011, Pages 26-27

  Wu, Yi ^a   Chai, Yang ^a,b   Chen, Hong Yu ^a   Yu, Shimeng ^a   Wong, H S Philip ^a  

^a Stanford University   (United States)

^b HONG KONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Hong Kong)

Author keywords

[No Author keywords available]

Indexed keywords

AVERAGE DIAMETER; CONTACT ELECTRODES; HIGH DENSITY; HIGH DENSITY MEMORY; LOW POWER; MEMORY APPLICATIONS; NON-VOLATILE; PROGRAMMING CURRENTS; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORIES; SWITCHING CURRENTS; SWITCHING CYCLES;

CARBON NANOTUBES; ELECTRODES; SWITCHING; SWITCHING SYSTEMS;

RANDOM ACCESS STORAGE;

EID: 80052657811     PISSN: 07431562     EISSN: None     Source Type: Conference Proceeding    
DOI: None     Document Type: Conference Paper

References (8)

1. Y. Sakotsubo,VLSI, 87 (2010),
2. B. Lee, VLSI, 28 (2009)
3. S. Hong, Nature Nanotech., 2, 207 (2007)
4. Y. Wu, EDL, 31, 1149 (2010),
5. G. F. Close, TED, 56, 43 (2009)
6. A. Naeemi, EDL, 28,428 (2007)
7. N. Patil, Trans. on Nanotech., 8, 498 (2009),
8. Y. S. Chen, IEDM Tech. Dig., 105 (2009).