Flexible double gate a-IGZO TFT fabricated on free standing polyimide foil

Solid-State Electronics

Volumn 84, Issue , 2013, Pages 198-204

  Münzenrieder, Niko ^a   Zysset, Christoph ^a   Petti, Luisa ^a   Kinkeldei, Thomas ^a   Salvatore, Giovanni A ^a   Tröster, Gerhard ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Amorphous indium gallium zinc oxide; Double gate transistor; Flexible electronics; Plastic substrates; Thin film transistor

Indexed keywords

AMORPHOUS FILMS; AMORPHOUS SEMICONDUCTORS; CAPACITANCE; CARRIER MOBILITY; DYNAMIC RANDOM ACCESS STORAGE; FABRICATION; FIELD EFFECT TRANSISTORS; FLEXIBLE ELECTRONICS; GALLIUM ALLOYS; INDIUM; SEMICONDUCTING INDIUM COMPOUNDS; SEMICONDUCTING ORGANIC COMPOUNDS; SUBSTRATES; TENSILE STRAIN; THIN FILM CIRCUITS; THIN FILMS; THRESHOLD VOLTAGE; TRANSISTORS; ZINC; ZINC OXIDE;

AMORPHOUS INDIUMGALLIUM-ZINC OXIDE (A-IGZO) THIN-FILM TRANSISTOR (TFTS); AMORPHOUS-INDIUM GALLIUM ZINC OXIDES; DOUBLE GATE TRANSISTOR; MECHANICAL FLEXIBILITY; ON/OFF CURRENT RATIO; PLASTIC SUBSTRATES; SUBTHRESHOLD SWING; TEMPERATURE SENSITIVITY;

THIN FILM TRANSISTORS;

EID: 84879505018     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.02.025     Document Type: Article

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