SCOPUS 정보 검색 플랫폼

Volumn 100, Issue 18, 2012, Pages

The charge trapping characteristics of Si 3N 4 and Al 2O 3 layers on amorphous-indium-gallium-zinc oxide thin films for memory application

(7) Sim Jung, Ji a Rha, Sang Ho b,c Ki Kim, Un a Jang Chung, Yoon a Soo Jung, Yoon a Choi, Jung Hae d Seong Hwang, Cheol a,b

a Seoul National University (South Korea)

b Seoul National University (South Korea)

c SAMSUNG Electronics (South Korea)

d Korea Institute of Science and Technology (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE TRAPPING CHARACTERISTICS; CONTINUOUS DISTRIBUTION; DISCRETE TRAPS; ELECTRON TRAPPING; IN-GA-ZN-O; LOW DENSITY; MEMORY APPLICATIONS; OXIDE THIN FILMS; ROOM TEMPERATURE; TRAP DENSITY; TRAPPED CARRIERS; TRAPPED CHARGE; TUNNELING OXIDES;

ALUMINUM; ATOMIC LAYER DEPOSITION; CHARGE TRAPPING; GALLIUM; SILICON; THIN FILMS; ZINC OXIDE;

AMORPHOUS SILICON;

EID: 84862551069 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4711202 Document Type: Article

Times cited : (22)

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