Kinetics and modeling of wet etching of aluminum oxide by warm phosphoric acid

Journal of the Electrochemical Society

Volumn 143, Issue 2, 1996, Pages 619-623

  Zhou, Bo ^a   Ramirez, W Fred ^a  

^a UCB 450   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIELECTRIC FILMS; ETCHING; HYDROGEN; IONS; MATHEMATICAL MODELS; OXIDES; PHOSPHORIC ACID; REACTION KINETICS; SPUTTER DEPOSITION; TEMPERATURE; VACUUM APPLICATIONS;

CONSTANT ETCH RATE; DEPOSITION BATCH; ETCHANT CONCENTRATION; FIRST ORDER KINETICS; HYDROGEN ION CONCENTRATION; WARM PHOSPHORIC ACID; WET ETCHING;

ALUMINUM COMPOUNDS;

EID: 0030086564     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.1836489     Document Type: Article

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