Amorphous-silicon thin-film transistors fabricated at 300 °C on a free-standing foil substrate of clear plastic

IEEE Electron Device Letters

Volumn 28, Issue 11, 2007, Pages 1004-1006

  Cherenack, Kunigunde H ^a   Kattamis, Alex Z ^a   Hekmatshoar, Bahman ^a   Sturm, James C ^a   Wagner, Sigurd ^a  

^a Princeton University   (United States)

Author keywords

Amorphous silicon (a Si); Gate bias stress; Mechanical stress; Plastic substrate; Stability; Thin film transistor (TFT)

Indexed keywords

AMORPHOUS SILICON; PASSIVATION; STRESS CONCENTRATION; SUBSTRATES;

GATE-BIAS STRESS; MECHANICAL STRESS;

THIN FILM TRANSISTORS;

EID: 36149000640     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2007.907411     Document Type: Article

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