The effects of mechanical bending and illumination on the performance of flexible IGZO TFTs

IEEE Transactions on Electron Devices

Volumn 58, Issue 7, 2011, Pages 2041-2048

  Munzenrieder, Niko ^a   Cherenack, Kunigunde H ^a   Troster, Gerhard ^a  

^a ETH ZURICH   (Switzerland)

Author keywords

Flexible electronics; InGaZnO (IGZO); strain; thin film transistors (TFTs)

Indexed keywords

COMPRESSIVE STRAIN; CONSTANT THRESHOLD; FLEXIBLE SUBSTRATE; HIGH CARRIER MOBILITY; INGAZNO (IGZO); LOW DEPOSITION TEMPERATURE; MECHANICAL BENDING; MECHANICAL STRAIN; SEMICONDUCTING MATERIALS;

AMORPHOUS FILMS; CARRIER MOBILITY; FLEXIBLE ELECTRONICS; TENSILE STRAIN; THIN FILM TRANSISTORS; THRESHOLD VOLTAGE;

BENDING TESTS;

EID: 79959515259     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2011.2143416     Document Type: Article

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