Persistent enhancement of the carrier density in electron irradiated InAs nanowires

Nanotechnology

Volumn 24, Issue 27, 2013, Pages

  Durand, Corentin ^a   Berthe, Maxime ^a   Makoudi, Younes ^a   Nys, Jean Philippe ^a   Leturcq, Renaud ^a   Caroff, Philippe ^a   Grandidier, Bruno ^a  

^a INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

FIELD EFFECTS; FOUR-POINT PROBE; INAS NANOWIRES; NANOWIRE SURFACE; RADIATION INDUCED DEFECTS; SURFACE FREE;

CARRIER CONCENTRATION; ELECTRIC PROPERTIES; ELECTRON BEAMS; SURFACE CHEMISTRY; SURFACE DEFECTS;

NANOWIRES;

EID: 84879308701     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/24/27/275706     Document Type: Article

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