메뉴 건너뛰기




Volumn 60, Issue 19, 1999, Pages 13846-13853

Electron- and photon-stimulated modification of gaas(110), si(100), and si(111)

Author keywords

[No Author keywords available]

Indexed keywords


EID: 0000796330     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.60.13846     Document Type: Article
Times cited : (38)

References (40)
  • 1
  • 27
    • 85037921329 scopus 로고    scopus 로고
    • Based on a one-dimensional heat transport model, each pulse at 35 mJ (Formula presented) produces a temperature rise of ∼250 K for ∼10 ns. Thermal desorption of GaAs is negligible at the peak temperature of ∼550 K.
    • Based on a one-dimensional heat transport model, each pulse at 35 mJ (Formula presented) produces a temperature rise of ∼250 K for ∼10 ns. Thermal desorption of GaAs is negligible at the peak temperature of ∼550 K.
  • 33
    • 85037885907 scopus 로고    scopus 로고
    • (private communication).
    • J. Kanasaki (private communication).
    • Kanasaki, J.1
  • 35
    • 0001168380 scopus 로고    scopus 로고
    • M. Martel, Ph. Avouris, and I.-W. Lyo, Science 272, 385 (1996).
    • (1996) Science , vol.272 , pp. 385
    • Martel, M.1


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.