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Volumn 81, Issue 11, 2010, Pages

Faceted sidewalls of silicon nanowires: Au-induced structural reconstructions and electronic properties

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Indexed keywords


EID: 77955062750     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.115403     Document Type: Article
Times cited : (53)

References (50)
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    • ) 2 + h2, where a3 is the atomic volume of Au (a=0.26nm ) and θ is the Au coverage on the sidewall. Based on synchrotron measurements of Si NWs grown with similar growth conditions (see Ref.), θ was set to 1.8 ML.
    • ) 2 + h 2, where a 3 is the atomic volume of Au (a = 0.26 nm) and θ is the Au coverage on the sidewall. Based on synchrotron measurements of Si NWs grown with similar growth conditions (see Ref.), θ was set to 1.8 ML.
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* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.