High yield of self-catalyzed GaAs nanowire arrays grown on silicon via gallium droplet positioning

Nanotechnology

Volumn 22, Issue 27, 2011, Pages

  Plissard, S ^a,b   Larrieu, G ^a,c   Wallart, X ^a   Caroff, P ^a  

^a INSTITUT D ELECTRONIQUE   (France)

^b EINDHOVEN UNIVERSITY OF TECHNOLOGY   (Netherlands)

^c UNIVERSITÉ DE TOULOUSE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

CHANGING TEMPERATURE; DENSE ARRAYS; DIELECTRIC LAYER; GAAS; HIGH YIELD; IN-SITU; INTER-WIRE DISTANCES; NANOWIRE ARRAYS; SELF-CATALYZED; SI (1 1 1); SUBSTRATE PREPARATION; V/III RATIO; VAPOR-LIQUID-SOLID MECHANISM;

CATALYSIS; DROPS; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; NANOWIRES;

SEMICONDUCTING GALLIUM;

EID: 79957862865     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/27/275602     Document Type: Article

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