Supercurrent and multiple Andreev reflections in an InSb nanowire Josephson junction

Nano Letters

Volumn 12, Issue 1, 2012, Pages 228-233

  Nilsson, H A ^a   Samuelsson, P ^a,b   Caroff, P ^c   Xu, H Q ^a  

^a LUND UNIVERSITY   (Sweden)

^b INSTITUT D ELECTRONIQUE   (France)

^c PEKING UNIVERSITY   (China)

Author keywords

InSb nanowires; Josephson junction; multiple Andreev reflection; supercurrent

Indexed keywords

BIAS CONFIGURATION; COMMUNICATION DEVICE; EMERGING MATERIALS; EPITAXIALLY GROWN; EXCELLENT MATERIAL SYSTEMS; EXCESS CURRENT; HIGH QUALITY; INSB NANOWIRE; JOSEPHSON JUNCTIONS; JUNCTION DEVICES; MAGNETIC FIELD DEPENDENCES; MAJORANA; MULTIPLE ANDREEV REFLECTIONS; PHYSICAL PHENOMENA; QUANTUM-INFORMATION PROCESSING; SOLID-STATE SYSTEM; SUPERCONDUCTING CONTACTS; SUPERCURRENTS; TEMPERATURE DEPENDENCE; VOLTAGE BIAS;

CURRENT VOLTAGE CHARACTERISTICS; DATA PROCESSING; INDIUM ANTIMONIDES; MAGNETIC FIELDS; MATERIALS SCIENCE; NANOWIRES; QUANTUM OPTICS; QUANTUM THEORY; REFLECTION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; SEMICONDUCTOR JUNCTIONS; SOLID STATE DEVICES; SUPERCONDUCTING MATERIALS; SUPERCONDUCTIVITY;

JOSEPHSON JUNCTION DEVICES;

ANTIMONY; INDIUM; NANOMATERIAL;

ARTICLE; CHEMISTRY; ELECTRIC CONDUCTIVITY; EQUIPMENT; EQUIPMENT DESIGN; PARTICLE SIZE; SEMICONDUCTOR; ULTRASTRUCTURE;

ANTIMONY; ELECTRIC CONDUCTIVITY; EQUIPMENT DESIGN; EQUIPMENT FAILURE ANALYSIS; INDIUM; NANOSTRUCTURES; PARTICLE SIZE; SEMICONDUCTORS;

EID: 84855766400     PISSN: 15306984     EISSN: 15306992     Source Type: Journal    
DOI: 10.1021/nl203380w     Document Type: Article

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