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Volumn 111, Issue 2, 2012, Pages

Environment and baking influence on charge retention on silicon nitride charge trap layers

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE CHARACTERISTICS; CHARGE RETENTION; CHARGE STORAGE CAPACITY; KELVIN FORCE MICROSCOPY; POISSON SOLVERS; STORAGE CAPACITY; STRONG LOCALIZATIONS; SURFACE CONTAMINATIONS;

EID: 84876788284     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3678455     Document Type: Article
Times cited : (4)

References (14)
  • 4
    • 0000862043 scopus 로고    scopus 로고
    • High-resolution imaging of contact potential difference with ultrahigh vacuum noncontact atomic force microscope
    • DOI 10.1063/1.121577, PII S0003695198032240
    • S. Kitamura and M. Iwatsuki, Appl. Phys. Lett. 72, 3154 (1998). 10.1063/1.121577 (Pubitemid 128677275)
    • (1998) Applied Physics Letters , vol.72 , Issue.24 , pp. 3154-3156
    • Kitamura, S.1    Iwatsuki, M.2
  • 10
    • 0342618427 scopus 로고    scopus 로고
    • Surface potential mapping: A qualitative material contrast in SPM
    • DOI 10.1016/S0304-3991(97)00027-2, PII S0304399197000272
    • H. Jacobs, H. Knapp, S. Müller, and A. Stemmer, Ultramicroscopy 65, 39 (1997). 10.1016/S0304-3991(97)00027-2 (Pubitemid 27372096)
    • (1997) Ultramicroscopy , vol.69 , Issue.1 , pp. 39-49
    • Jacobs, H.O.1    Knapp, H.F.2    Muller, S.3    Stemmer, A.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.