The electrical and optical properties of InAs irradiated with electrons (∼2 MeV): The energy structure of intrinsic point defects

Semiconductors

Volumn 39, Issue 4, 2005, Pages 385-394

  Brudnyi V N ^a   Grinyaev, S N ^a   Kolin, N G ^b  

^a TOMSK STATE UNIVERSITY   (Russian Federation)

^b State Research Center of Russia   (Russian Federation)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 17444398210     PISSN: 10637826     EISSN: None     Source Type: Journal    
DOI: 10.1134/1.1900249     Document Type: Article

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