Quantitative analysis of hysteretic reactions at the interface of graphene and SiO2 using the short pulse I-V method

Carbon

Volumn 60, Issue , 2013, Pages 453-460

  Lee, Young Gon ^a   Kang, Chang Goo ^a   Cho, Chunhum ^a   Kim, Yonghun ^a   Hwang, Hyeon Jun ^a   Lee, Byoung Hun ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHEMICAL VAPOR DEPOSITED; DOMINANT MECHANISM; ELECTRONIC DEVICE; GRAPHENE FIELD-EFFECT TRANSISTORS; HYSTERETIC CHARACTERISTICS; INTERFACIAL REDOX REACTIONS; OXYGEN DEFICIENT; SYSTEMATIC ANALYSIS;

CHARGE TRAPPING; FIELD EFFECT TRANSISTORS; HYSTERESIS; REDOX REACTIONS;

GRAPHENE;

EID: 84878541710     PISSN: 00086223     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.carbon.2013.04.060     Document Type: Article

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