Correlating defect density with carrier mobility in large-scaled graphene films: Raman spectral signatures for the estimation of defect density

Nanotechnology

Volumn 21, Issue 46, 2010, Pages

  Hwang, Jeong Yuan ^a   Kuo, Chun Chiang ^b   Chen, Li Chyong ^a   Chen, Kuei Hsien ^a,b  

^a NATIONAL TAIWAN UNIVERSITY   (Taiwan)

^b INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL QUALITIES; GROWTH CONDITIONS; GROWTH PARAMETERS; HALL MEASUREMENTS; INTENSITY RATIO; LAYER NUMBER; NEGATIVE GATE VOLTAGES; NEUTRALITY POINT; P-TYPE; PEAK INTENSITY; RAMAN SPECTRA; RAMAN SPECTRAL SIGNATURES;

CHEMICAL VAPOR DEPOSITION; DEFECTS; FILM GROWTH; GALVANOMAGNETIC EFFECTS; GRAPHENE; HALL MOBILITY; MONOLAYERS; RAMAN SCATTERING; RAMAN SPECTROSCOPY;

DEFECT DENSITY;

EID: 78650140524     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/21/46/465705     Document Type: Article

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