Hysteresis in the resistance of a graphene device induced by charge modulation in the substrate

Applied Physics Letters

Volumn 97, Issue 4, 2010, Pages

  Brant, J C ^a   Leon, J ^a   Barbosa, T C ^a   Araujo, E N D ^a   Archanjo, B S ^b   Plentz, F ^a   Alves, E S ^a  

^a FEDERAL UNIVERSITY OF MINAS GERAIS   (Brazil)

^b INSTITUTO NACIONAL DE METROLOGIA   (Brazil)

Author keywords

[No Author keywords available]

Indexed keywords

CHARGE MODULATION; GATE VOLTAGES; GRAPHENE DEVICES; SI SUBSTRATES;

GRAPHENE;

SUBSTRATES;

EID: 77955758786     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3473815     Document Type: Article

References (17)

1. J. -H. Chen, C. Jang, S. Xiao, M. Ishigami, and M. S. Fuhrer, Nat. Nanotechnol. NNAABX 1748-3387 3, 206 (2008). 10.1038/nnano.2008.58 (Pubitemid 351499398)
2. Y. Shi, X. Dong, P. Chen, J. Wang, and L. -J. Li, Phys. Rev. B PLRBAQ 0556-2805 79, 115402 (2009). 10.1103/PhysRevB.79.115402
3. Y. Zhang, V. W. Brar, C. Girit, A. Zettl, and M. F. Crommie, Nat. Phys. ZZZZZZ 1745-2473 5, 722 (2009). 10.1038/nphys1365
4. J. Martin, N. Akerman, G. Ulbricht, T. Lohmann, J. H. Smet, K. von Klitzing, and A. Yacoby, Nat. Phys. ZZZZZZ 1745-2473 4, 144 (2008). 10.1038/nphys781
5. E. J. H. Lee, K. Balasubramanian, R. T. Weitz, M. Burghard, and K. Kern, Nat. Nanotechnol. NNAABX 1748-3387 3, 486 (2008). 10.1038/nnano.2008.172
6. P. Blake, R. Yang, S. V. Morozov, F. Schedin, L. A. Ponomarenko, A. A. Zhukov, R. R. Nair, I. V. Grigorieva, K. S. Novoselov, and A. K. Geim, Solid State Commun. SSCOA4 0038-1098 149, 1068 (2009). 10.1016/j.ssc.2009.02.039
7. A. C. Ferrari, J. C. Meyer, V. Scardaci, C. Casiraghi, M. Lazzeri, F. Mauri, S. Piscanec, D. Jiang, K. S. Novoselov, S. Roth, and A. K. Geim, Phys. Rev. Lett. PRLTAO 0031-9007 97, 187401 (2006). 10.1103/PhysRevLett.97.187401 (Pubitemid 44658281)
8. P. Blake, E. W. Hill, A. H. Castro Neto, K. S. Novoselov, D. Jiang, R. Yang, T. J. Booth, and A. K. Geim, Appl. Phys. Lett. APPLAB 0003-6951 91, 063124 (2007). 10.1063/1.2768624 (Pubitemid 47247192)
9. Y. -W. Tan, Y. Zhang, K. Bolotin, Y. Zhao, S. Adam, E. H. Hwang, S. Das Sarma, H. L. Stormer, and P. Kim, Phys. Rev. Lett. PRLTAO 0031-9007 99, 246803 (2007). 10.1103/PhysRevLett.99.246803 (Pubitemid 350276599)
10. Y. Sui and J. Appenzeller, Nano Lett. NALEFD 1530-6984 9, 2973 (2009). 10.1021/nl901396g
11. E. H. Nicollian and J. R. Brews, MOS (Metal Oxide Semiconductor) Physics and Technology (Wiley, New York, 1982).
12. A. Goetzberger, IEEE Trans. Electron Devices IETDAI 0018-9383 14, 787 (1967). 10.1109/T-ED.1967.16109
13. A. Rusu and C. Bulucea, IEEE Trans. Electron Devices IETDAI 0018-9383 26, 201 (1979). 10.1109/T-ED.1979.19404
14. L. F. Lou and G. L. Tettemer, J. Appl. Phys. JAPIAU 0021-8979 63, 5398 (1988). 10.1063/1.340358
15. M. Ershov and V. Ryshii, Semicond. Sci. Technol. SSTEET 0268-1242 10, 138 (1995). 10.1088/0268-1242/10/2/003
16. S. M. Sze, Semiconductor Devices, Physics and Technology (Wiley, New York, 1985).
17. J. Grosvalet and C. Jund, IEEE Trans. Electron Devices IETDAI 0018-9383 14, 777 (1967). 10.1109/T-ED.1967.16106