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Applied Physics Letters

Volumn 99, Issue 8, 2011, Pages

The role of charge traps in inducing hysteresis: Capacitance-voltage measurements on top gated bilayer graphene

(5) Kalon, Gopinadhan a Jun Shin, Young a Giang Truong, Viet a Kalitsov, Alan a Yang, Hyunsoo a

a NATIONAL UNIVERSITY OF SINGAPORE (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BI-LAYER; CAPACITANCE VOLTAGE MEASUREMENTS; CHANNEL RESISTANCE; CHARGE TRAP; GATE OXIDE; GRAPHENE TRANSISTORS; TIME CONSTANTS;

CAPACITANCE; CHARGE TRAPPING; GATES (TRANSISTOR); GRAPHENE; VOLTAGE MEASUREMENT;

HYSTERESIS;

EID: 80052402404 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3626854 Document Type: Article

Times cited : (68)

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