The role of intersubband optical transitions on the electrical properties of InGaAs/GaAs quantum dot solar cells

Progress in Photovoltaics: Research and Applications

Volumn 21, Issue 4, 2013, Pages 736-746

  Jolley, Greg ^a   Fu, Lan ^a   Lu, Hao Feng ^a   Tan, Hark Hoe ^a   Jagadish, Chennupati ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

III V semiconductors; intermediate band; intersubband transitions; quantum dot; solar cell

Indexed keywords

CURRENT CHARACTERISTIC; II-IV SEMICONDUCTORS; INTERMEDIATE BANDS; INTERSUBBAND OPTICAL TRANSITIONS; INTERSUBBAND TRANSITIONS; OPTICAL INTERBAND TRANSITIONS; QUANTUM DOT ABSORPTION; QUANTUM DOT SOLAR CELLS;

ELECTRIC PROPERTIES; OPEN CIRCUIT VOLTAGE; OPTICAL TRANSITIONS; SOLAR CELLS;

SEMICONDUCTOR QUANTUM DOTS;

EID: 84878167706     PISSN: 10627995     EISSN: 1099159X     Source Type: Journal    
DOI: 10.1002/pip.2161     Document Type: Article

References (50)

1. Luque A, Martí A,. increasing the efficiency of ideal solar cells by photon induced transitions at intermediate levels. Physical Review Letters 1997; 78: 5014-5017. DOI: 10.1103/PhysRevLett.78.5014. (Pubitemid 127644729)
2. Ley M, Boudaden J, Kuznicki ZT,. Thermodynamic efficiency of an intermediate band photovoltaic cell with low threshold Auger generation. Journal of Applied Physics 2005; 98: 44905-44909. DOI: 10.1063/1.2010622.
3. Martí A, Cuadra L, Luque A,. Quantum dot intermediate band solar cell. Proceedings of the IEEE 28th Photovoltaics Specialist Conference. 2000; 940-943.
4. Aroutiounian V, Petrosyan S, Khachatryan A, Touryan K,. Quantum dot solar cell. Journal of Applied Physics 2001; 89: 2268-2271. DOI: 10.1063/1.1339210.
5. 0.5As/GaAs quantum dot solar cells and the influence on the open circuit voltage. Applied Physics Letters 2010; 97: 123505. DOI: 10.1063/1.3492836.
6. Lu HF, Fu L, Jolley G, Tan HH, Tatavarti SR, Jagadish C,. Temperature dependence of dark current properties of InGaAs/GaAs quantum dot solar cells. Applied Physics Letters 2011; 98: 183509. DOI: 10.1063/1.3586251.
7. Guimard D, Morihara R, Bordel D, Tanabe K, Wakayama Y, Nishioka M, Arakawa Y,. Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage. Applied Physics Letters 2010; 96: 203507. DOI: 10.1063/1.3427392.
8. Hubbard SM, Cress CD, Bailey CG, Raffaelle RP, Bailey SG, Wilt DM,. Effect of strain compensation on quantum dot enhanced GaAs solar cells. Applied Physics Letters 2008; 92: 123512. DOI: 10.1063/1.2903699.
9. 0.8As cap layer. Applied Physics Letters 2010; 97: 183104. DOI: 10.1063/1.3507390.
10. Laghumavarapu RB, El-Emawy M, Nuntawong N, Moscho A, Lester LF, Huffaker DL,. Improved device performance of InAs/GaAs quantum dot solar cells with GaP strain compensation layers. Applied Physics Letters 2007; 91: 243115. DOI: 10.1063/1.2816904.
11. McPheeters CO, Hill CJ, Lim SH, Derkacs D, Ting DZ, Yu ET,. Improved performance of In(Ga)As/GaAs quantum dot solar cells via light scattering by nanoparticles. Journal of Applied Physics 2009; 106: 056101. DOI: 10.1063/1.3213366.
12. Zhou D, Vullum PE, Sharma G, Thomassen SF, Holmestad R, Reenaas TW, Fimland BO,. Positioning effects on quantum dot solar cells grown by molecular beam epitaxy. Applied Physics Letters 2010; 96: 083108. DOI: 10.1063/1.3309411.
13. Zhou D, Sharma G, Thomassen SF, Reenaas TW, Fimland BO,. Optimization towards high density quantum dots for intermediate band solar cells grown by molecular beam epitaxy. Applied Physics Letters 2010; 96: 061913. DOI: 10.1063/1.3313938.
14. Lõpez N, Martí A, Luque A, Stanley C, Farmer C, Díaz P,. Experimental analysis of the operation of quantum dot intermediate band solar cells. Journal of Solar Energy Engineering 2007; 129: 319-322. DOI: 10.1115/1.2735344. (Pubitemid 47317763)
15. Sablon KA, Little JW, Mitin V, Sergeev A, Vagidov N, Reinhardt K,. Strong enhancement of solar cell efficiency due to quantum dots with built-in charge. Nano Letters 2011; 11: 2311-2317. DOI: 10.1021/nl200543v.
16. Sablon KA, Little JW, Mitin V, Sergeev A, Vagidov N, Reinhardt K,. Quantum dot solar cells: effective conversion of IR due to inter-dot n-doping. Proceedings of the IEEE 37th Photovoltaics Specialist Conference. 2011
17. Sablon KA, Little JW, Olver KA, Wang ZM, Dorogan VG, Mazur YI, Salamo GJ, Towner FJ,. Effects of AlGaAs energy barriers on InAs/GaAs quantum dot solar cells. Journal of Applied Physics 2010; 108: 74305-74308. DOI: 10.1063/1.3486014.
18. Gu T, El-Emawy MA, Yang K, Stintz A, Lester LF,. Resistance to edge recombination in GaAs-based dots-in-a-well solar cells. Applied Physics Letters 2009; 95: 261106. DOI: 10.1063/1.3277149.
19. Martí A, Antolín E, Cánovas E, et al., Elements of the design and analysis of quantum-dot intermediate band solar cells. Thin Solid Films 2008; 516: 6716-6722. DOI: 10.1016/j.tsf.2007.12.064.
20. Popescu V, Bester G, Hanna MC, Norman AG, Zunger A,. Theoretical and experimental examination of the intermediate-band concept for strain-balanced (In,Ga)As/Ga(As,P) quantum dot solar cells. Physical Review B 2008; ct 78: 205321-205337. DOI: 10.1103/PhysRevB.78.205321.
21. Linares PG, Martí A, Antolín E, Luque A,. III-V compound semiconductor screening for implementing quantum dot intermediate band solar cells. Journal of Applied Physics 2011; 109: 14313-14320. DOI: 10.1063/1.3527912.
22. Dahal SN, Bremner SP, Honsberg CB,. Identification of candidate material systems for quantum dot solar cells including the effect of strain. Progress in Photovoltaics: Research and Applications 2010; 18: 233-239. DOI: 10.1002/pip.937.
23. Martí A, Cuadra L, Luque A,. Quasi-drift diffusion model for the quantum dot intermediate band solar cell. IEEE Transactions on Electron Devices 2002; 49: 1632-1639. DOI: 10.1109/TED.2002.802642. (Pubitemid 35017151)
24. Martí A, Cuadra L, Luque A,. Partial filling of a quantum dot intermediate band for solar cells. IEEE Transactions on Electron Devices 2001; 48: 2394-2399. DOI: 10.1109/16.954482. (Pubitemid 33018207)
25. Luque A, Martí A, Lõpez N, et al., Operation of the intermediate band solar cell under nonideal space charge region conditions and half filling of the intermediate band. Journal of Applied Physics 2006; 99: 94503-94511. DOI: 10.1063/1.2193063.
26. Tomic S, Jones TS, Harrison NM,. Absorption characteristics of a quantum dot array induced intermediate band: implications for solar cell design. Applied Physics Letters 2008; 93: 263105. DOI: 10.1063/1.3058716.
27. Strandberg R, Reenaas TW,. Photofilling of intermediate bands. Journal of Applied Physics 2009; 105: 124512-124519. DOI: 10.1063/1.3153141.
28. Wei G, Shiu KT, Giebink NC, Forrest SR,. Thermodynamic limits of quantum photovoltaic cell efficiency. Applied Physics Letters 2007; 91: 223507. DOI: 10.1063/1.2817753.
29. Jenks S, Gilmore R,. Quantum dot solar cell: materials that produce two intermediate bands. Journal of Renewable and Sustainable Energy 2010; 2: 13111-13119. DOI: 10.1063/1.3327817.
30. Martí A, Antolín E, Stanley CR, et al., Production of photocurrent due to intermediate-to-conduction-band transitions: a demonstration of a key operating principle of the intermediate-band solar cell. Physical Review Letters 2006; 97: 247701-247704. DOI: 10.1103/PhysRevLett.97.247701.
31. Okada Y, Morioka T, Yoshida K, et al., Increase in photocurrent by optical transitions via intermediate quantum states in direct-doped InAs/GaNAs strain-compensated quantum dot solar cell. Journal of Applied Physics 2011; 109: 24301-24305. DOI: 10.1063/1.3533423.
32. Huffaker DL, Birudavolu S,. MOCVD-grown InAs/GaAs quantum dots. Proceedings of SPIE 2003; 4999: 478-485. DOI: 10.1117/12.488041.
33. Lever P, Tan HH, Jagadish C,. InGaAs quantum dots grown with GaP strain compensation layers. Journal of Applied Physics 2004; 95: 5710-5714. DOI: 10.1063/1.1707230.
34. Saint-Girons G, Patriarche G, Largeau L, et al., Metal-organic vapor-phase epitaxy of defect-free InGaAs/GaAs quantum dots emitting around 1.3 μm. Journal of Crystal Growth 2002; 235: 89-94. DOI: 10.1016/S0022-0248(01) 01817-6. (Pubitemid 34070341)
35. Barnham K, Connolly J, Griffin P, et al., Voltage enhancement in quantum well solar cells. Journal of Applied Physics 1996; 80: 1201-1206. DOI: 10.1063/1.362857. (Pubitemid 126571915)
36. Zibik EA, Adawi AM, Wilson LR, et al., Intra-valence band transitions in self-assembled InAs/GaAs quantum dots studied using photocurrent spectroscopy. Journal of Applied Physics 2006; bf100: 13106-13109. DOI: 10.1063/1.2206342.
37. Narvaez GA, Zunger A,. Calculation of conduction-to-conduction and valence-to-valence transitions between bound states in (In,Ga)As/GaAs quantum dots. Physical Review B 2007; 75: 85306-85311. DOI: 10.1103/PhysRevB.75.085306.
38. 0.8As quantum-dots-in-a-well infrared photodetectors. Journal of Physics D 2009; 42: 095101-095108. DOI: 10.1088/0022-3727/42/9/095101.
39. 0.5As/GaAs quantum dot infrared photodetectors grown by metal-organic chemical vapor deposition. IEEE Journal of Electron Device Letters 2005; 26: 628-630. DOI: 10.1109/LED.2005.853635. (Pubitemid 41430950)
40. Aslan B, Song CY, Liu HC,. On the spectral response of quantum dot infrared photodetectors: postgrowth annealing and polarization behaviors. Applied Physics Letters 2008; 92: 253118. DOI: 10.1063/1.2953083.
41. Vukmirovíc N, Indjin D, Ikoníc Z, Harrison P,. Origin of detection wavelength tuning in quantum dots-in-a-well infrared photodetectors. Applied Physics Letters 2006; 88: 251107. DOI: 10.1063/1.2216920.
42. Levine BF, Zussman A, Gunapala SD, Asom MT, Kuo JM, Hobson WS,. Photoexcited escape probability, optical gain, and noise in quantum well infrared photodetectors. Journal of Applied Physics 1992; 72: 4429-4444. DOI: 10.1063/1.352210.
43. Xu Z, Zhang Y, Hvam JM,. Long luminescence lifetime in self-assembled InGaAs/GaAs quantum dots at room temperature. Applied Physics Letters 2008; 93: 183116. DOI: 10.1063/1.3021018.
44. Wang G, Fafard S, Leonard D, Bowers JE, Merz JL, Petroff PM,. Time-resolved optical characterization of InGaAs/GaAs quantum dots. Applied Physics Letters 1994; 64: 2815. DOI: 10.1063/1.111434.
45. Malins DB, Gomez-Iglesias A, White SJ, Sibbett W, Miller A, Rafailov EU,. Ultrafast electroabsorption dynamics in an InAs quantum dot saturable absorber at 1.3 μm. Applied Physics Letters 2006; 89: 171111. DOI: 10.1063/1.2369818.
46. Cataluna MA, Malins DB, Gomez-Iglesias A, Sibbett W, Miller A, Rafailov EU,. Temperature dependence of electroabsorption dynamics in an InAs quantum-dot saturable absorber at 1.3 μm and its impact on mode-locked quantum-dot lasers. Applied Physics Letters 2010; 97: 121110. DOI: 10.1063/1.3489104.
47. Porte HP, Jepsen PU, Daghestani N, Rafailov EU, Turchinovich D,. Ultrafast release and capture of carriers in InGaAs/GaAs quantum dots observed by time-resolved terahertz spectroscopy. Applied Physics Letters 2009; otect 94: 262104. DOI: 10.1063/1.3158958.
48. Antolín E, Martí A, Farmer CD, et al., Reducing carrier escape in the InAs/GaAs quantum dot intermediate band solar cell. Journal of Applied Physics 2010; 108: 64513-64519. DOI: 10.1063/1.3468520.
49. Laghumavarapu RB, Moscho A, Khoshakhlagh A, El-Emawy M, Lester LF, Huffaker DL,. GaSb/GaAs type II quantum dot solar cells for enhanced infrared spectral response. Applied Physics Letters 2007; 90: 173125. DOI: 10.1063/1.2734492.
50. Jolley G, Fu L, Tan HH, Jagadish C,. Effects of annealing on the spectral response and dark current of quantum dot infrared photodetectors. Journal of Physics D 2008; 41: 215101-215107. DOI: 10.1088/0022-3727/41/21/215101.