Effect of strain compensation on quantum dot enhanced GaAs solar cells

Applied Physics Letters

Volumn 92, Issue 12, 2008, Pages

  Hubbard, S M ^a   Cress, C D ^a   Bailey, C G ^a   Raffaelle, R P ^a   Bailey, S G ^b   Wilt, D M ^b  

^a ROCHESTER INSTITUTE OF TECHNOLOGY   (United States)

^b NASA GLENN RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT VOLTAGE CHARACTERISTICS; ELECTROLUMINESCENCE; QUANTUM EFFICIENCY; SEMICONDUCTING GALLIUM ARSENIDE; SEMICONDUCTOR QUANTUM DOTS; SHORT CIRCUIT CURRENTS;

STRAIN COMPENSATION;

SOLAR CELLS;

EID: 41349096877     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2903699     Document Type: Article

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