Effects of annealing on the properties of In0.5Ga 0.5As/GaAs/Al0.2Ga0.8As quantum dots-in-a-well infrared photodetectors

Journal of Physics D: Applied Physics

Volumn 42, Issue 11, 2009, Pages

  Jolley, G ^a   Xiao, B ^a   Fu, L ^a   Tan, H H ^a   Jagadish, C ^a  

^a AUSTRALIAN NATIONAL UNIVERSITY   (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; GALLIUM; INDIUM; INFRARED DETECTORS; OPTOELECTRONIC DEVICES; SEMICONDUCTOR QUANTUM DOTS;

ANNEALING TEMPERATURES; DARK CURRENT-VOLTAGE; DEVICE PARAMETERS; INFRARED PHOTODETECTOR; QUANTUM DOT; QUANTUM DOTS; TEMPERATURE DEPENDENT;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 84921001533     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/42/11/115103     Document Type: Article

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