Fabrication of InAs/GaAs quantum dot solar cells with enhanced photocurrent and without degradation of open circuit voltage

Applied Physics Letters

Volumn 96, Issue 20, 2010, Pages

  Guimard, Denis ^a   Morihara, Ryo ^a   Bordel, Damien ^a   Tanabe, Katsuaki ^a   Wakayama, Yuki ^a   Nishioka, Masao ^a   Arakawa, Yasuhiko ^a,b  

^a INSTITUTE OF INDUSTRIAL SCIENCE   (Japan)

^b UNIVERSITY OF TOKYO   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRONIC COUPLING; GROUND-STATE ENERGIES; HIGH EFFICIENCY; INAS/GAAS; QUANTUM DOT SOLAR CELLS; WETTING LAYER;

DEGRADATION; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR QUANTUM DOTS;

SOLAR CELLS;

EID: 77952961165     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3427392     Document Type: Article

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