Quantum dot solar cells: Effective conversion of IR radiation due to inter-dot n-doping

Conference Record of the IEEE Photovoltaic Specialists Conference

Volumn , Issue , 2011, Pages 002646-002651

  Sablon, Kimberly A ^a   Little, John W ^a   Mitin, Vladimir ^b   Sergeev, Andrei ^b   Vagidov, Nizami ^b   Reinhardt, Kitt ^c   Olver, Kimberley A ^a  

^a U S ARMY RESEARCH LABORATORY   (United States)

^b UNIVERSITY AT BUFFALO   (United States)

^c AIR FORCE OFFICE OF SCIENTIFIC RESEARCH   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON CHARGE; FAST ELECTRONS; GAAS; HIGHER EFFICIENCY; HOLE CAPTURE; INAS/GAAS; INTER-SUBBAND; IR ENERGY; N-DOPED; N-DOPING; P-DOPING; PHOTO-VOLTAIC EFFICIENCY; PHOTOVOLTAIC CONVERSION; PHOTOVOLTAIC RESPONSE; PHYSICAL MECHANISM; POTENTIAL PROFILES; POWER EFFICIENCY; QUANTUM DOT SOLAR CELLS; SPECTRAL CHARACTERISTICS;

DEGRADATION; EFFICIENCY; ELECTRONS; OPEN CIRCUIT VOLTAGE; PHOSPHORUS; PHOTOVOLTAIC EFFECTS; SEMICONDUCTOR QUANTUM DOTS;

ORGANIC POLYMERS;

EID: 84861079796     PISSN: 01608371     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/PVSC.2011.6186492     Document Type: Conference Paper

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