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Journal of Applied Physics

Volumn 108, Issue 7, 2010, Pages

Effects of AlGaAs energy barriers on InAs/GaAs quantum dot solar cells

(8) Sablon, K A a Little, J W a Olver, K A a Wang, Zh M b Dorogan, V G b Mazur, Yu I b Salamo, G J b Towner, F J c

a U S ARMY RESEARCH LABORATORY (United States)

b UNIVERSITY OF ARKANSAS (United States)

c Maxion Technologies Inc (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ACTIVE REGIONS; CUTOFF WAVELENGTHS; GAAS; INAS QUANTUM DOTS; INAS/GAAS; MATRIX; MATRIX MATERIALS; PHOTOGENERATED CARRIERS; QUANTUM DOT; QUANTUM DOT LAYERS; QUANTUM DOT SOLAR CELLS; SELF-ASSEMBLED; SOLAR CELL PERFORMANCE; THEORETICAL PREDICTION;

ALUMINUM GALLIUM ARSENIDE; ENERGY BARRIERS; GALLIUM ALLOYS; GALLIUM ARSENIDE; INDIUM ARSENIDE; OPTICAL WAVEGUIDES; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS; SOLAR ENERGY; TRANSPORT PROPERTIES;

QUANTUM CHEMISTRY;

EID: 77958179276 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3486014 Document Type: Article

Times cited : (34)

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