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Journal of Applied Physics

Volumn 106, Issue 5, 2009, Pages

Improved performance of In(Ga)As/GaAs quantum dot solar cells via light scattering by nanoparticles

(6) McPheeters, C O a Hill, C J b Lim, S H a Derkacs, D a Ting, D Z b,c Yu, E T a,b

a UNIVERSITY OF CALIFORNIA (United States)

b CALIFORNIA INSTITUTE OF TECHNOLOGY (United States)

c The University of Texas at Austin (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ABSORPTION EDGES; ACTIVE LAYER; HIGH REFRACTIVE INDEX; INAS QUANTUM DOTS; INCIDENT RADIATION; INFRARED PHOTOCURRENTS; INGAAS/GAAS; POWER CONVERSION EFFICIENCIES; QUANTUM DOT SOLAR CELLS; QUANTUM WELL SOLAR CELLS; WAVEGUIDE MODE;

ABSORPTION; CONVERSION EFFICIENCY; GALLIUM; INDIUM ARSENIDE; INFRARED RADIATION; NANOPARTICLES; OPTICAL WAVEGUIDES; PHOTOCURRENTS; PHOTOVOLTAIC CELLS; REFRACTIVE INDEX; SEMICONDUCTING INDIUM; SEMICONDUCTOR QUANTUM WELLS; SOLAR CELLS; SWITCHING CIRCUITS; WAVEGUIDES;

SEMICONDUCTOR QUANTUM DOTS;

EID: 70349342815 PISSN: 00218979 EISSN: None Source Type: Journal
DOI: 10.1063/1.3213366 Document Type: Article

Times cited : (28)

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