Positioning effects on quantum dot solar cells grown by molecular beam epitaxy

Applied Physics Letters

Volumn 96, Issue 8, 2010, Pages

  Zhou, D ^a   Vullum, P E ^a   Sharma, G ^a   Thomassen, S F ^a   Holmestad, R ^a   Reenaas, T W ^a   Fimland, B O ^a  

^a NORWEGIAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Norway)

Author keywords

[No Author keywords available]

Indexed keywords

AIR MASS; CURRENT VOLTAGE; DEVICE PERFORMANCE; EXTERNAL QUANTUM EFFICIENCY; GAAS; HIGH DENSITY; INAS/GAAS; PHOTORESPONSES; QUANTUM DOT SOLAR CELLS; QUANTUM DOTS; SPECTRAL RESPONSE CHARACTERISTICS; SPECTRAL RESPONSE MEASUREMENTS;

CRYSTAL GROWTH; GALLIUM ALLOYS; GALLIUM ARSENIDE; MOLECULAR BEAM EPITAXY; MOLECULAR BEAMS; OPEN CIRCUIT VOLTAGE; SEMICONDUCTING GALLIUM; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

CURRENT VOLTAGE CHARACTERISTICS;

EID: 77749264619     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3309411     Document Type: Article

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