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Volumn 97, Issue 12, 2010, Pages

Electron-hole recombination properties of In0.5 Ga0.5 As/GaAs quantum dot solar cells and the influence on the open circuit voltage

(5) Jolley, Greg a Lu, Hao Feng a Fu, Lan a Tan, Hark Hoe a Jagadish, Chennupati a

a AUSTRALIAN NATIONAL UNIVERSITY (Australia)

Author keywords

[No Author keywords available]

Indexed keywords

A-THERMAL; DEPLETION REGION; ELECTRICAL PROPERTY; ELECTRON-HOLE RECOMBINATION; INTERMEDIATE-BAND SOLAR CELLS; P-TYPE; QUANTUM DOT; QUANTUM DOT SOLAR CELLS; TEMPERATURE DEPENDENT; THERMAL INJECTION;

CHARGE INJECTION; GALLIUM; INDIUM; OPEN CIRCUIT VOLTAGE; SEMICONDUCTOR QUANTUM DOTS; SOLAR CELLS;

ELECTRIC PROPERTIES;

EID: 77957167347 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3492836 Document Type: Article

Times cited : (50)

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