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Volumn 113, Issue 15, 2013, Pages

Stability and spacial trap state distribution of solution processed ZnO-thin film transistors

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS STABILITIES; CHARGE SEPARATIONS; CHARGE TRANSPORT PROCESS; INTERACTIONS WITH SURFACES; LONG-TERM STORAGE STABILITY; PERCOLATION THRESHOLDS; TRAP STATE DISTRIBUTIONS; ZINC OXIDE THIN FILMS;

EID: 84877757915     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4801892     Document Type: Article
Times cited : (21)

References (21)
  • 4
    • 33745435681 scopus 로고    scopus 로고
    • 10.1016/j.jnoncrysol.2006.01.073
    • H. Hosono, J. Non-Cryst. Solids 352, 851-858 (2006). 10.1016/j. jnoncrysol.2006.01.073
    • (2006) J. Non-Cryst. Solids , vol.352 , pp. 851-858
    • Hosono, H.1
  • 16
    • 84888370227 scopus 로고    scopus 로고
    • 10.1016/j.jcrysgro.2012.10.043
    • M. Ortel and V. Wagner, J. Cryst. Growth 363, 185-189 (2013). 10.1016/j.jcrysgro.2012.10.043
    • (2013) J. Cryst. Growth , vol.363 , pp. 185-189
    • Ortel, M.1    Wagner, V.2
  • 17
    • 77950593789 scopus 로고    scopus 로고
    • 10.1016/j.orgel.2010.01.023
    • B. Gburek and V. Wagner, Org. Electron. 11, 814-819 (2010). 10.1016/j.orgel.2010.01.023
    • (2010) Org. Electron. , vol.11 , pp. 814-819
    • Gburek, B.1    Wagner, V.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.