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Volumn 97, Issue 10, 2010, Pages

The influence of sputtering power and O2 /Ar flow ratio on the performance and stability of Hf-In-Zn-O thin film transistors under illumination

(15) Kim, Hyun Suk a Park, Kyung Bae a Son, Kyoung Seok a Park, Joon Seok a Maeng, Wan Joo a Kim, Tae Sang a Lee, Kwang Hee a Kim, Eok Su a Lee, Jiyoul a Suh, Joonki a Seon, Jong Baek a Ryu, Myung Kwan a Lee, Sang Yoon a Lee, Kimoon b Im, Seongil b

a Samsung Advanced Institute of Technology (SAIT) (South Korea)

b Yonsei University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

BIAS STRESS; DEPOSITION CONDITIONS; DEVICE DEGRADATION; FLOW RATIOS; GAS-FLOW RATIO; NEGATIVE BIAS; OXIDE SEMICONDUCTOR; PHOTOELECTRIC EFFECT; SPUTTERING POWER; VISIBLE LIGHT;

HAFNIUM; PHOTOELECTRICITY; THIN FILM TRANSISTORS; THIN FILMS; ZINC;

AMORPHOUS FILMS;

EID: 77956602866 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3488823 Document Type: Article

Times cited : (32)

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