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Electrochemical and Solid-State Letters

Volumn 14, Issue 2, 2011, Pages

Effect of trap density on the stability of SiInZnO thin-film transistor under temperature and bias-induced stress

(3) Chong, Eugene a,b Chun, Yoon Soo a Lee, Sang Yeol a,b

a Korea Institute of Science and Technology (South Korea)

b University of Science and Technology (UST) (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CHANNEL LAYERS; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDES; INDUCED STRESS; OXYGEN EFFECT; PROCESS TEMPERATURE; RADIO FREQUENCY SPUTTERING; ROOM TEMPERATURE; SUBTHRESHOLD SWING; TRAP DENSITY;

ESTERS; INDIUM; OXYGEN; SEMICONDUCTING ORGANIC COMPOUNDS; SPUTTERING; ZINC;

THIN FILM TRANSISTORS;

EID: 78951494012 PISSN: 10990062 EISSN: None Source Type: Journal
DOI: 10.1149/1.3518518 Document Type: Article

Times cited : (22)

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