Improvement of bias stability of indium zinc oxide thin film transistors by the incorporation of hafnium fabricated by radio-frequency magnetron sputtering

Thin Solid Films

Volumn 519, Issue 20, 2011, Pages 6881-6883

  Chong, Eugene ^a,b   Chun, Yoon Soo ^a   Kim, Seung Han ^a,c   Lee, Sang Yeol ^a,b  

^a Korea Institute of Science and Technology   (South Korea)

^b University of Science and Technology (UST)   (South Korea)

^c Chung Ang University   (South Korea)

Author keywords

Carrier concentration; HIZO; IZO; Stability

Indexed keywords

AMORPHOUS OXIDES; BIAS INSTABILITY; BIAS STABILITY; BIAS TEMPERATURE STRESS; CARRIER GENERATION; DEPOSITION CONDITIONS; ELECTRON NEGATIVITY; HIZO; INDIUM ZINC OXIDES; IZO; METAL CATION; ON-CURRENTS; OXYGEN DEFICIENCY; RADIO-FREQUENCY-MAGNETRON SPUTTERING; SEMICONDUCTOR CHANNELS;

AMORPHOUS FILMS; CARRIER CONCENTRATION; DEPOSITION; HAFNIUM; HAFNIUM OXIDES; POSITIVE IONS; SEMICONDUCTING INDIUM; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSISTORS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

INDIUM;

EID: 80051550261     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2011.04.044     Document Type: Conference Paper

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