AgInSbTe memristor with gradual resistance tuning

Applied Physics Letters

Volumn 102, Issue 18, 2013, Pages

  Zhang, J J ^a,b   Sun, H J ^a,b   Li, Y ^a,b   Wang, Q ^a,b   Xu, X H ^a,b   Miao, X S ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

AGINSBTE; APPLIED VOLTAGES; CHALCOGENIDE MATERIALS; ELECTROCHEMICAL METALLIZATION (ECM); MEMRISTIVE SWITCHES; MEMRISTOR; RESISTANCE VARIATIONS; SPACE CHARGE LIMITED CONDUCTION;

MEMRISTORS; METALLIZING; RESISTORS;

PASSIVE FILTERS;

EID: 84877736750     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4804983     Document Type: Article

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