SCOPUS 정보 검색 플랫폼

Chinese Physics Letters

Volumn 26, Issue 2, 2009, Pages

Reversible resistance switching effect in amorphous Ge1Sb 4Te7 thin films without phase transformation

(4) Sun, Hua Jun a Hou, Li Song a Wu, Yi Qun a Tang, Xiao Dong b

a SHANGHAI INSTITUTE OF OPTICS AND FINE MECHANICS (China)

b EAST CHINA NORMAL UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

AMORPHOUS FILMS; ANTIMONY COMPOUNDS; CURRENT VOLTAGE CHARACTERISTICS; ELECTRIC SWITCHES; GERMANIUM ALLOYS; GERMANIUM COMPOUNDS; PHASE TRANSITIONS; SWITCHING; TELLURIUM COMPOUNDS; THIN FILMS;

CELL RESISTANCE; CRYSTALLINE PHASE TRANSFORMATION; ELECTRIC VOLTAGE; LOW RESISTANCE; LOW-HIGH; NANOSCALE CAPACITORS; PHASES TRANSFORMATION; RESISTANCE SWITCHING EFFECT; SWITCHING EFFECT; THIN-FILMS;

ATOMIC FORCE MICROSCOPY;

EID: 66149117454 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/26/2/024203 Document Type: Article

Times cited : (8)

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