Electrode materials for Ge2Sb2Te5-based memristors

Journal of Electronic Materials

Volumn 41, Issue 12, 2012, Pages 3417-3422

  Wang, Q ^a,b   Sun, H J ^a,b   Zhang, J J ^a,b   Xu, X H ^a,b   Miao, X S ^a,b  

^a HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

^b HUAZHONG UNIVERSITY OF SCIENCE AND TECHNOLOGY   (China)

Author keywords

Conductive filament; Electrode materials; Ge2Sb2Te5; Memristor

Indexed keywords

CHALCOGENIDE MATERIALS; CONDUCTIVE FILAMENTS; CU ELECTRODE; CURRENT VOLTAGE CURVE; DEVICE STRUCTURES; ELECTRODE MATERIAL; INERT ELECTRODES; LAYER STRUCTURES; MEMORY APPLICATIONS; MEMRISTOR;

BINDING ENERGY; CHALCOGENIDES; ELECTRODES; GERMANIUM; MEMRISTORS; PASSIVE FILTERS; PHASE STABILITY; SILVER;

RESISTORS;

EID: 84869491331     PISSN: 03615235     EISSN: None     Source Type: Journal    
DOI: 10.1007/s11664-012-2256-6     Document Type: Article

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