-
1
-
-
84864763331
-
Filamentary-switching model in RRAM for time, energy and scaling projections
-
D. Ielmini, "Filamentary-switching model in RRAM for time, energy and scaling projections," in Proc. IEDM, 2011, pp. 409-412
-
(2011)
Proc. IEDM
, pp. 409-412
-
-
Ielmini, D.1
-
2
-
-
46749093701
-
Memristive switching mechanism for metal/oxide/metal nanodevices
-
Jul
-
J. J. Yang, M. D. Pickett, X. Li, D. A. A. Ohlberg, D. R. Stewart, and S. Williams, "Memristive switching mechanism for metal/oxide/metal nanodevices," Nat. Nanotechnol., vol. 3, no. 7, pp. 429-433, Jul. 2008
-
(2008)
Nat. Nanotechnol.
, vol.3
, Issue.7
, pp. 429-433
-
-
Yang, J.J.1
Pickett, M.D.2
Li, X.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Williams, S.6
-
3
-
-
82155166369
-
Modeling the universal set/reset characteristics of bipolar RRAM by field and temperature driven filament growth
-
Dec
-
D. Ielmini, "Modeling the universal set/reset characteristics of bipolar RRAM by field and temperature driven filament growth," IEEE Trans. Electron Devices, vol. 58, no. 12, pp. 4309-4317, Dec. 2011
-
(2011)
IEEE Trans. Electron Devices
, vol.58
, Issue.12
, pp. 4309-4317
-
-
Ielmini, D.1
-
4
-
-
70549106464
-
Unified physical model of bipolar oxide-based resistive switching memory
-
Dec
-
B. Gao, B. Sun, H. Zhang, L. Liu, L. Liu, R. Han, J. Kang, and B. Yu, "Unified physical model of bipolar oxide-based resistive switching memory," IEEE Electron Device Lett., vol. 30, no. 12, pp. 1326-1328, Dec. 2009
-
(2009)
IEEE Electron Device Lett.
, vol.30
, Issue.12
, pp. 1326-1328
-
-
Gao, B.1
Sun, B.2
Zhang, H.3
Liu, L.4
Liu, L.5
Han, R.6
Kang, J.7
Yu, B.8
-
5
-
-
78649446429
-
An ultrathin forming-free HfOx resistance memory with excellent electrical performance
-
Dec
-
Y. S. Chen, H.-Y. Lee, P.-S. Chen, T.-Y. Wu, C.-C. Wang, P.-J. Tzeng, F. Chen, M.-J. Tsai, and C. Lien, "An ultrathin forming-free HfOx resistance memory with excellent electrical performance," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1473-1475, Dec. 2010
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.12
, pp. 1473-1475
-
-
Chen, Y.S.1
Lee, H.-Y.2
Chen, P.-S.3
Wu, T.-Y.4
Wang, C.-C.5
Tzeng, P.-J.6
Chen, F.7
Tsai, M.-J.8
Lien, C.9
-
6
-
-
67649143212
-
The mechanism of electroforming of metal oxide memristive switches
-
May
-
J. J. Yang, F. Miao, M. D. Pickett, D. A. A. Ohlberg, D. R. Stewart, C. N. Lau, and R. Stanley Williams, "The mechanism of electroforming of metal oxide memristive switches," Nanotechnology, vol. 20, no. 21, pp. 215201-1-215201-9, May 2009
-
(2009)
Nanotechnology
, vol.20
, Issue.21
, pp. 2152011-2152019
-
-
Yang, J.J.1
Miao, F.2
Pickett, M.D.3
Ohlberg, D.A.A.4
Stewart, D.R.5
Lau, C.N.6
Stanley Williams, R.7
-
7
-
-
79951950366
-
A novel operation scheme for oxidebased resistive-switching memory devices to achieve controlled switching behaviors
-
Mar
-
B. Chen, B. Gao, S. W. Sheng, L. F. Liu, X. Y. Chen, Y. Wang, R. Q. Han, B. Yu, and J. F. Kang, "A novel operation scheme for oxidebased resistive-switching memory devices to achieve controlled switching behaviors," IEEE Electron Device Lett., vol. 32, no. 3, pp. 282-284, Mar. 2011
-
(2011)
IEEE Electron Device Lett.
, vol.32
, Issue.3
, pp. 282-284
-
-
Chen, B.1
Gao, B.2
Sheng, S.W.3
Liu, L.F.4
Chen, X.Y.5
Wang, Y.6
Han, R.Q.7
Yu, B.8
Kang, J.F.9
-
8
-
-
67650102619
-
Redox-based resistive switching memories-Nanoionic mechanisms, prospects, and challenge
-
Dec
-
R. Waser, R. Dittmann, G. Staikov, and K. Szot, "Redox-based resistive switching memories-Nanoionic mechanisms, prospects, and challenge," Adv. Mater., vol. 21, no. 25/26, pp. 2632-2663, Dec. 2009
-
(2009)
Adv. Mater.
, vol.21
, Issue.25-26
, pp. 2632-2663
-
-
Waser, R.1
Dittmann, R.2
Staikov, G.3
Szot, K.4
-
9
-
-
83455179487
-
Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor
-
Dec
-
F. Miao, J. P. Strachan, J. J. Yang, M.-X. Zhang, I. Goldfarb, A. C. Torrezan, P. Eschbach, R. D. Kelley, G. Medeiros-Ribeiro, and R. StanleyWilliams, "Anatomy of a nanoscale conduction channel reveals the mechanism of a high-performance memristor," Adv. Mater., vol. 23, no. 47, pp. 5633-5640, Dec. 2011
-
(2011)
Adv. Mater.
, vol.23
, Issue.47
, pp. 5633-5640
-
-
Miao, F.1
Strachan, J.P.2
Yang, J.J.3
Zhang, M.-X.4
Goldfarb, I.5
Torrezan, A.C.6
Eschbach, P.7
Kelley, R.D.8
Medeiros-Ribeiro, G.9
Stanleywilliams, R.10
-
10
-
-
77649178908
-
Resistance controllability of Ta2O5/TiO2 stack ReRAM for low-voltage and multilevel operation
-
Mar
-
M. Terai, Y. Sakotsubo, S. Kotsuji, and H. Hada, "Resistance controllability of Ta2O5/TiO2 stack ReRAM for low-voltage and multilevel operation," IEEE Electron Device Lett., vol. 31, no. 3, pp. 204-206, Mar. 2010
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.3
, pp. 204-206
-
-
Terai, M.1
Sakotsubo, Y.2
Kotsuji, S.3
Hada, H.4
-
11
-
-
68249128656
-
Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism
-
Z.Wei, Y. Kanzawa, K. Arita, Y. Katoh, K. Kawai, S. Muraoka, S.Mitani, S. Fujii, K. Katayama, M. Iijima, T. Mikawa, T. Ninomiya, R. Miyanaga, Y. Kawashima, A. Himeno, T. Okada, R. Azuma, K. Shimakawa, H. Sugaya, T. Takagi, R. Yasuhara, K. Horiba, H. Kumigashira, and M. Oshima, "Highly reliable TaOx ReRAM and direct evidence of redox reaction mechanism," in Proc. IEDM, 2008, pp. 293-296
-
(2008)
Proc. IEDM
, pp. 293-296
-
-
Wei, Z.1
Kanzawa, Y.2
Arita, K.3
Katoh, Y.4
Kawai, K.5
Muraoka, S.6
Mitani, S.7
Fujii, S.8
Katayama, K.9
Iijima, M.10
Mikawa, T.11
Ninomiya, T.12
Miyanaga, R.13
Kawashima, Y.14
Himeno, A.15
Okada, T.16
Azuma, R.17
Shimakawa, K.18
Sugaya, H.19
Takagi, T.20
Yasuhara, R.21
Horiba, K.22
Kumigashira, H.23
Oshima, M.24
more..
-
12
-
-
78649444385
-
A phenomenological model for the reset mechanism of metal oxide RRAM
-
Dec
-
S. Yu and H. S. Wong, "A phenomenological model for the reset mechanism of metal oxide RRAM," IEEE Electron Device Lett., vol. 31, no. 12, pp. 1455-1457, Dec. 2010
-
(2010)
IEEE Electron Device Lett.
, vol.31
, Issue.12
, pp. 1455-1457
-
-
Yu, S.1
Wong, H.S.2
|