Strain effect analysis on the electrical conductivity of Si/Si 1-xGex nanocomposite thin films

Solid-State Electronics

Volumn 85, Issue , 2013, Pages 64-73

  Li, H ^a   Xu, Y ^a,b   Li, G ^a  

^a Clemson University   (United States)

^b ZHEJIANG UNIVERSITY   (China)

Author keywords

Flexible electronic devices; Nanocomposite thin films; Strain effect

Indexed keywords

CONDUCTION BAND EDGE; ELECTRICAL CONDUCTIVITY; ELECTRONIC BAND STRUCTURE; FLEXIBLE ELECTRONIC DEVICES; NANOCOMPOSITE THIN FILMS; NON-EQUILIBRIUM GREEN'S FUNCTION; SEMICONDUCTOR NANOCOMPOSITE; STRAIN EFFECT;

GERMANIUM; NANOCOMPOSITE FILMS; POISSON EQUATION; STRAIN;

ELECTRIC CONDUCTIVITY OF SOLIDS;

EID: 84877249411     PISSN: 00381101     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.sse.2013.03.009     Document Type: Article

References (40)

1. H.-C. Yuan, M.M. Kelly, D.E. Savage, M.G. Lagally, G.K. Celler, and Z. Ma Thermally processed high-mobility MOS thin-film transistors on transferable single-crystal elastically strain-sharing Si/SiGe/Si nanomembranes IEEE Trans Electron Dev 55 3 2008 810 815 (Pubitemid 351404538)
2. F.M. Li, G. Hsieh, and S. Dalal Zinc oxide nanostructures and high electron mobility composite nano-film thin film transistors IEEE Trans Electron Dev 55 11 2008 3001 3011
3. M.S. Dresselhaus, G. Chen, M.Y. Tang, R.G. Yang, H. Lee, and D.Z. Wang New directions for low-dimensional thermoelectric materials Adv Mater 19 8 2007 1043 1053 (Pubitemid 46942265)
4. x and potential for further improvement J Appl Phys 108 2010 124306
5. Y. Ezzahri, G. Zeng, K. Fukutani, Z. Bian, and A. Shakouri A comparison of thin film microrefrigerators based on Si/SiGe superlattice and bulk SiGe Microelectron J 39 7 2008 981 991 (Pubitemid 351778422)
6. X.W. Wang, H. Lee, Y.C. Lan, G.H. Zhu, G. Joshi, and D.Z. Wang Enhanced thermoelectric figure of merit in nanostructured n-type silicon germanium bulk alloy Appl Phys Lett 93 2008 193121
7. B. Zhang, J. He, X. Ji, T.M. Tritt, and A. Kumbhar Controlled two-dimensional coated nanostructures for bulk thermoelectric composites Appl Phys Lett 89 2006 163114
8. J. Zhou, X. Li, G. Chen, and R. Yang Semiclassical model for thermoelectric transport in nanocomposites Phys Rev B 82 2010 115308
9. A. Popescu, L.M. Woods, J. Martin, and G.S. Nolas Model of transport properties of thermoelectric composite nano-film materials Phys Rev B 79 2009 205302
10. Y. Xu, and G. Li Strain effect analysis on phonon thermal conductivity of two-dimensional nanocomposites J Appl Phys 106 2009 114302
11. S. Takagi, T. Mizuno, T. Tezuka, N. Sugiyama, S. Nakaharai, and T. Numata Sub-band structures engineering for advanced CMOS channels Solid-State Electron 49 5 2005 684 694 (Pubitemid 40340015)
12. I. Lauer, and D.A. Antoniadis Enhancement of electron mobility in ultrathin-body silicon-on-insulator MOSFETs with uniaxial strain IEEE Electron Dev Lett 26 5 2005 314 316 (Pubitemid 40708840)
13. Uchida K, Zednik R, Lu C-H, Jagannathan H, McVittie J, McIntyre PC, et al. Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs. In: IEDM Tech. Dig. San Francisco (CA); 2004. p. 229-32. (Pubitemid 40940652)
14. Uchida K, Krishnamohan T, Saraswat KC, Nishi Y. Physical mechanisms of electron mobility enhancement in uniaxial stressed MOSFETs and impact of uniaxial stress engineering in ballistic regime. In: IEDM Tech. Dig. Washington DC; 2005. p. 135-8.
15. T. Maegawa, T. Yamauchi, T. Hara, H. Tsuchiya, and M. Ogawa Strain effects on electronic bandstructures in nanoscaled silicon: from bulk to nanowire IEEE Trans Electron Dev 56 4 2009 553 559
16. y substrates Appl Phys Lett 48 8 1986 538 540 (Pubitemid 17615470)
17. S. Huang, and L. Yang Strain engineering of band offsets in Si/Ge core-shell nanowires Appl Phys Lett 98 2011 093114
18. C.G. Van de Walle Band lineups and deformation potentials in the model-solid theory Phys Rev B 39 3 1989 1871 1883
19. 1-x bulk alloys on germanium 〈0 0 1âŒ̈ substrates Phys Rev B 34 4 1986 2508 2510
20. L. Liu, G.S. Lee, and A.H. Marshak Band discontinuities of Si/Ge heterostructures Solid-State Electron 37 3 1994 421 425 (Pubitemid 124017074)
21. I.M. Graz, D.P.J. Cotton, and S.P. Lacour Extended cyclic uniaxial loading of stretchable gold thin-films on elastomeric substrates Appl Phys Lett 94 2009 071902
22. S. Logothetidis Flexible organic electronic devices: materials, process and applications Mater Sci Eng, B 152 2008 96 104
23. S.A. Scott, and M.G. Lagally Elastically strain-sharing nanomembranes: flexible and transferable strained silicon and silicon-germanium alloys J Phys D: Appl Phys 40 2007 R75 R92
24. I. Balslev Influence of uniaxial stress on the indirect absorption edge in silicon and germanium Phys Rev 143 2 1966 636 647
25. E. Ungersboeck, S. Dhar, G. Karlowatz, V. Sverdlov, H. Kosina, and S. Selberherr The effect of general strain on the band structure and electron mobility of silicon IEEE Trans Electron Dev 54 9 2007 2183 2189
26. Y. Sun, S.E Thompson, and T. Nishida Strain effect in semiconductors: theory and device applications 2010 Springer Science+Business Media, LLC
27. Z. Ren, R. Venugopal, S. Goasguen, S. Datta, and M.S. Lundstrom NanoMOS 2.5: a two-dimensional simulator for quantum transport in double-gate MOSFETs IEEE Trans Electron Dev 50 9 2003 1914 1925
28. S. Datta Electronic transport in mesoscopic systems 1997 Cambridge University Press Cambridge, UK
29. A. Bulusu, and D.G. Walker Quantum modeling of thermoelectric properties of Si/Ge/Si superlattices IEEE Trans Electron Dev 55 1 2008 423
30. J.W. Jiang, J.S. Wang, and B. Li A Nonequilibrium Green's function study of thermoelectric properties in single-walled carbon nanotubes J Appl Phys 109 1 2011 014326
31. J. Wang, E. Polizzi, and M. Lundstrom A Three-dimensional quantum simulation of silicon nanowire transistors with the effective-mass approximation J Appl Phys 96 4 2004 2192
32. P.S. Damle, A.W. Ghosh, and S. Datta Unified description of molecular conduction: from molecules to metallic wires Phys Rev B 64 201403 2001
33. M.E Levinshtein, S.L Rumyantsev, and M.S Shur Properties of advanced semiconductor materials: GaN, AlN, InN, BN, SiC, SiGe," Ch. 6 2001 John Wiley & Sons, Ltd.
34. 1-x substrates Appl Phys Lett 63 2 1993 186 188
35. C.G. Van de Walle, and R.M. Martin Theoretical calculations of heterojunction discontinuities in the Si/Ge system Phys Rev B 34 8 1986 5621
36. M.V. Fischetti, and S.E. Laux Band structure, deformation potentials, and carrier mobility in strained Si, Ge and SiGe alloys J Appl Phys 80 4 1996 2234 2252 (Pubitemid 126581450)
37. R. Venugopal, Z. Ren, S. Datta, and M. Lundstrom Simulating quantum transport in nanoscale Transistors: real versus mode-space approaches J Appl Phys 92 7 2002 3730 (Pubitemid 35209148)
38. M. Buttiker Four-terminal phase-coherent conductance Phys Rev Lett 57 14 1986 1761 1764
39. A. Svizhenko, M.P. Anantram, T.R. Govindan, B. Biegel, and R. Venugopal Two-dimensional quantum mechanical modeling of nanotransistors J Appl Phys 91 4 2002 2343 2354
40. Uchida K, Zednik R, et al. Experimental study of biaxial and uniaxial strain effects on carrier mobility in bulk and ultrathin-body SOI MOSFETs, IEDM; 2004. p. 229.