Thermoelectric properties of nanostructured Si1-x Gex and potential for further improvement

Journal of Applied Physics

Volumn 108, Issue 12, 2010, Pages

  Bera, Chandan ^a   Soulier, M ^a   Navone, C ^a   Roux, Guilhem ^a   Simon, J ^a   Volz, S ^b   Mingo, Natalio ^a  

^a CEA GRENOBLE   (France)

^b ECOLE CENTRALE PARIS   (France)

Author keywords

[No Author keywords available]

Indexed keywords

BULK MOBILITY; DOPING CONCENTRATION; EXPERIMENTAL MEASUREMENTS; GRAIN SIZE; NANO POWDERS; NANO-STRUCTURED; P-TYPE; PRESENT VALUE; ROOM TEMPERATURE; SCATTERING PROBABILITIES; SI-GE ALLOYS; STATE OF THE ART; TEMPERATURE RANGE; THEORETICAL APPROACH; THERMOELECTRIC FIGURE OF MERIT; THERMOELECTRIC PROPERTIES; THERMOPOWERS;

GRAIN BOUNDARIES; GRAIN SIZE AND SHAPE; OPTIMIZATION; SINTERING; THERMOELECTRIC EQUIPMENT;

GERMANIUM;

EID: 78650853640     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3518579     Document Type: Article

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