SCOPUS 정보 검색 플랫폼

Volumn 1, Issue 5, 2013, Pages 967-976

The correlation between gate dielectric, film growth, and charge transport in organic thin film transistors: The case of vacuum-sublimed tetracene thin films

(11) Wünsche, Julia a Tarabella, Giuseppe b Bertolazzi, Simone a Bocoum, Maimouna a Coppedè, Nicola b Barba, Luisa c Arrighetti, Gianmichele c Lutterotti, Luca d Iannotta, Salvatore b Cicoira, Fabio a Santato, Clara a

a ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

b IMEM CNR (Italy)

c CNR (Italy)

d UNIVERSITY OF TRENTO (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC FORCE MICROSCOPY; DIELECTRIC MATERIALS; FIELD EFFECT TRANSISTORS; FILM GROWTH; GATE DIELECTRICS; LUMINESCENCE OF ORGANIC SOLIDS; PHOTOTRANSISTORS; POLYSTYRENES; RIETVELD METHOD; TEXTURES; X RAY DIFFRACTION;

CRYSTALLINE PHASE; DIELECTRIC SUBSTRATES; GATE DIELECTRIC LAYERS; GRAZING INCIDENCE X-RAY DIFFRACTION; ORGANIC THIN FILM TRANSISTORS; PROCESSING CONDITION; SURFACE POLARITIES; TETRACENE THIN FILMS;

THIN FILM TRANSISTORS;

EID: 84876906240 PISSN: 20507534 EISSN: 20507526 Source Type: Journal
DOI: 10.1039/c2tc00337f Document Type: Article

Times cited : (20)

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