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Applied Physics Letters

Volumn 99, Issue 1, 2011, Pages

Tetracene thin film transistors with polymer gate dielectrics

(4) Bertolazzi, Simone a Wnsche, Julia a Cicoira, Fabio b Santato, Clara a

a ÉCOLE POLYTECHNIQUE DE MONTRÉAL (Canada)

b IMEM CNR (Italy)

Author keywords

[No Author keywords available]

Indexed keywords

LOW-COST ELECTRONICS; PARYLENE C; POLYMER DIELECTRICS; POLYMER GATE DIELECTRICS; TETRACENE; TETRACENE FILMS; TETRACENE THIN FILMS;

DIELECTRIC DEVICES; FLEXIBLE ELECTRONICS; GATES (TRANSISTOR); HOLE MOBILITY; POLYMER FILMS; POLYMERS; POLYSTYRENES; SILICA; THIN FILM DEVICES; THIN FILM TRANSISTORS; THIN FILMS; TRANSPORT PROPERTIES;

GATE DIELECTRICS;

EID: 79960520296 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3606535 Document Type: Article

Times cited : (17)

References (27)

1
- 77953885466
- 10.1039/b909902f
- H. Klauk, Chem. Soc. Rev. 39, 2643 (2010). 10.1039/b909902f
- (2010) Chem. Soc. Rev. , vol.39 , pp. 2643
- Klauk, H.¹

2
- 66249097422
- 10.1002/adma.200803211
- R. A. Street, Adv. Mater. 21, 2007 (2009). 10.1002/adma.200803211
- (2009) Adv. Mater. , vol.21 , pp. 2007
- Street, R.A.¹

3
- 17444403170
- Tetracene light-emitting transistors on flexible plastic substrates
- DOI 10.1063/1.1898429, 141106
- C. Santato, I. Manunza, A. Bonfiglio, F. Cicoira, P. Cosseddu, R. Zamboni, and M. Muccini, Appl. Phys. Lett. 86, 141106 (2005). 10.1063/1.1898429 (Pubitemid 40537372)
- (2005) Applied Physics Letters , vol.86 , Issue.14 , pp. 1-3
- Santato, C.¹ Manunza, I.² Bonfiglio, A.³ Cicoira, F.⁴ Cosseddu, P.⁵ Zamboni, R.⁶ Muccini, M.⁷

4
- 0038657789
- 10.1063/1.1577216
- A. Bonfiglio, F. Mameli, and O. Sanna, Appl. Phys. Lett. 82, 3550 (2003). 10.1063/1.1577216
- (2003) Appl. Phys. Lett. , vol.82 , pp. 3550
- Bonfiglio, A.¹ Mameli, F.² Sanna, O.³

5
- 70350576278
- 10.1103/PhysRevB.80.115307
- P. R. Ribi, V. Kalihari, C. D. Frisbie, and G. Bratina, Phys. Rev. B 80, 115307 (2009). 10.1103/PhysRevB.80.115307
- (2009) Phys. Rev. B , vol.80 , pp. 115307
- Ribi, P.R.¹ Kalihari, V.² Frisbie, C.D.³ Bratina, G.⁴

6
- 27144540626
- 10.1002/adma.v17:20
- H. Sirringhaus, Adv. Mater. 17, 2411 (2005). 10.1002/adma.v17:20
- (2005) Adv. Mater. , vol.17 , pp. 2411
- Sirringhaus, H.¹

7
- 75649122220
- 10.1021/cr9001275
- R. P. Ortiz, A. Facchetti, and T. J. Marks, Chem. Rev. 110, 205 (2010). 10.1021/cr9001275
- (2010) Chem. Rev. , vol.110 , pp. 205
- Ortiz, R.P.¹ Facchetti, A.² Marks, T.J.³

8
- 33749533450
- Gate dielectric chemical structure-organic field-effect transistor performance correlations for electron, hole, and ambipolar organic semiconductors
- DOI 10.1021/ja063290d
- M. H. Yoon, C. Kim, A. Facchetti, and T. J. Marks, J. Am. Chem. Soc. 128, 12851 (2006). 10.1021/ja063290d (Pubitemid 44527762)
- (2006) Journal of the American Chemical Society , vol.128 , Issue.39 , pp. 12851-12869
- Yoon, M.-H.¹ Kim, C.² Facchetti, A.³ Marks, T.J.⁴

9
- 79956038122
- Thin-film transistors based on well-ordered thermally evaporated naphthacene films
- DOI 10.1063/1.1471378
- D. J. Gundlach, J. A. Nichols, L. Zhou, and T. N. Jackson, Appl. Phys. Lett. 80, 2925 (2002). 10.1063/1.1471378 (Pubitemid 34599200)
- (2002) Applied Physics Letters , vol.80 , Issue.16 , pp. 2925
- Gundlach, D.J.¹ Nichols, J.A.² Zhou, L.³ Jackson, T.N.⁴

10
- 4043052594
- 10.1103/PhysRevLett.91.157406
- A. Hepp, H. Heil, W. Weise, M. Ahles, R. Schmechel, and H. von Seggern, Phys. Rev. Lett. 91, 157406 (2003). 10.1103/PhysRevLett.91.157406
- (2003) Phys. Rev. Lett. , vol.91 , pp. 157406
- Hepp, A.¹ Heil, H.² Weise, W.³ Ahles, M.⁴ Schmechel, R.⁵ Von Seggern, H.⁶

11
- 15944378556
- 10.1002/adfm.v15:3
- F. Cicoira, C. Santato, F. Dinelli, M. Murgia, M. A. Loi, F. Biscarini, R. Zamboni, P. Heremans, and M. Muccini, Adv. Funct. Mater. 15, 375 (2005). 10.1002/adfm.v15:3
- (2005) Adv. Funct. Mater. , vol.15 , pp. 375
- Cicoira, F.¹ Santato, C.² Dinelli, F.³ Murgia, M.⁴ Loi, M.A.⁵ Biscarini, F.⁶ Zamboni, R.⁷ Heremans, P.⁸ Muccini, M.⁹

12
- 36849077599
- 10.1002/adfm.v17:17
- F. Cicoira and C. Santato, Adv. Funct. Mater. 17, 3421 (2007). 10.1002/adfm.v17:17
- (2007) Adv. Funct. Mater. , vol.17 , pp. 3421
- Cicoira, F.¹ Santato, C.²

13
- 34547200011
- 10.1002/adfm.v17:10
- T. Takahashi, T. Takenobu, J. Takeya, and Y. Iwasa, Adv. Funct. Mater. 17, 1623 (2007). 10.1002/adfm.v17:10
- (2007) Adv. Funct. Mater. , vol.17 , pp. 1623
- Takahashi, T.¹ Takenobu, T.² Takeya, J.³ Iwasa, Y.⁴

14
- 64149115373
- 10.1016/j.orgel.2008.11.002
- Y.-S. Jang, H.-S. Seo, Y. Zhang, and J.-H. Choi, Org. Electron. 10, 222 (2009). 10.1016/j.orgel.2008.11.002
- (2009) Org. Electron. , vol.10 , pp. 222
- Jang, Y.-S.¹ Seo, H.-S.² Zhang, Y.³ Choi, J.-H.⁴

15
- 77958101698
- 10.1063/1.3495764
- J. J. Burdett, A. M. Muller, D. Gosztola, and C. J. Bardeen, J. Chem. Phys. 133, 144506 (2010). 10.1063/1.3495764
- (2010) J. Chem. Phys. , vol.133 , pp. 144506
- Burdett, J.J.¹ Muller, A.M.² Gosztola, D.³ Bardeen, C.J.⁴

16
- 79953001520
- 10.1063/1.3554835
- H. Satou, Y. Ohshima, H. Kohn, T. Manaka, and M. Iwamoto, J. Appl. Phys. 109, 054506 (2011). 10.1063/1.3554835
- (2011) J. Appl. Phys. , vol.109 , pp. 054506
- Satou, H.¹ Ohshima, Y.² Kohn, H.³ Manaka, T.⁴ Iwamoto, M.⁵

17
- 2342574893
- 10.1103/PhysRevLett.92.116802
- F. Dinelli, M. Murgia, P. Levy, M. Cavallini, F. Biscarini, and D. M. de Leeuw, Phys. Rev. Lett. 92, 116802 (2004). 10.1103/PhysRevLett.92.116802
- (2004) Phys. Rev. Lett. , vol.92 , pp. 116802
- Dinelli, F.¹ Murgia, M.² Levy, P.³ Cavallini, M.⁴ Biscarini, F.⁵ De Leeuw, D.M.⁶

18
- 22944466650
- 10.1002/adma.v17:14
- R. Ruiz, A. Papadimitratos, A. C. Mayer, and G. G. Malliaras, Adv. Mater. 17, 1795 (2005). 10.1002/adma.v17:14
- (2005) Adv. Mater. , vol.17 , pp. 1795
- Ruiz, R.¹ Papadimitratos, A.² Mayer, A.C.³ Malliaras, G.G.⁴

19
- 79960493712
- 0 are the film thickness, the relative, and absolute dielectric permittivity, respectively. Dielectric constants are taken from Refs..
- 0 are the film thickness, the relative, and absolute dielectric permittivity, respectively. Dielectric constants are taken from Refs..

20
- 3242672494
- (Kluwer Academic, Boston).
- J. B. Fortin and T. M. Lu, Chemical Vapor Deposition Polymerization: The Growth and Properties of Parylene Thin Films (Kluwer Academic, Boston, 2004).
- (2004) Chemical Vapor Deposition Polymerization: The Growth and Properties of Parylene Thin Films
- Fortin, J.B.¹ Lu, T.M.²

21
- 34047109564
- WSXM: A software for scanning probe microscopy and a tool for nanotechnology
- DOI 10.1063/1.2432410
- I. Horcas, R. Fernandez, J. M. Gomez-Rodriguez, J. Colchero, J. Gomez-Herrero, and A. M. Baro, Rev. Sci. Instrum. 78, 13705 (2007). 10.1063/1.2432410 (Pubitemid 46511822)
- (2007) Review of Scientific Instruments , vol.78 , Issue.1 , pp. 013705
- Horcas, I.¹ Fernandez, R.² Gomez-Rodriguez, J.M.³ Colchero, J.⁴ Gomez-Herrero, J.⁵ Baro, A.M.⁶

22
- 79960486087
- No n-type transport was detected, not surprisingly in view of the air-ambient processing of the plastic gate dielectrics.
- No n-type transport was detected, not surprisingly in view of the air-ambient processing of the plastic gate dielectrics.

23
- 79960530546
- Hole mobilities, threshold voltages, and current on-off ratios were extracted from the transfer curves in saturation regime and averaged over about 20 devices for each dielectric.
- Hole mobilities, threshold voltages, and current on-off ratios were extracted from the transfer curves in saturation regime and averaged over about 20 devices for each dielectric.

24
- 0037355810
- 10.1002/adfm.200390030
- J. Veres, S. D. Ogier, S. W. Leeming, D. C. Cupertino, and S. Mohialdin Khaffaf, Adv. Funct. Mater. 13, 199 (2003). 10.1002/adfm.200390030
- (2003) Adv. Funct. Mater. , vol.13 , pp. 199
- Veres, J.¹ Ogier, S.D.² Leeming, S.W.³ Cupertino, D.C.⁴ Mohialdin Khaffaf, S.⁵

25
- 9744261680
- 10.1063/1.1812368
- A. F. Stassen, R. W. I. de Boer, N. N. Iosad, and a. F. Morpurgo, Appl. Phys. Lett. 85, 3899 (2004). 10.1063/1.1812368
- (2004) Appl. Phys. Lett. , vol.85 , pp. 3899
- Stassen, A.F.¹ De Boer, R.W.I.² Iosad, N.N.³ Morpurgo, A.F.⁴

26
- 77956167522
- 10.1063/1.3273396
- S. S. Sabri, P. L. Levesque, C. M. Aguirre, J. Guillemette, R. Martel, and T. Szkopek, Appl. Phys. Lett. 95, 242104 (2009). 10.1063/1.3273396
- (2009) Appl. Phys. Lett. , vol.95 , pp. 242104
- Sabri, S.S.¹ Levesque, P.L.² Aguirre, C.M.³ Guillemette, J.⁴ Martel, R.⁵ Szkopek, T.⁶

27
- 79955796191
- 10.1021/nn1027032
- F. Cicoira, C. M. Aguirre, and R. Martel, ACS Nano 5, 283 (2011). 10.1021/nn1027032
- (2011) ACS Nano , vol.5 , pp. 283
- Cicoira, F.¹ Aguirre, C.M.² Martel, R.³

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