Zirconia and hafnia films from single source molecular precursor compounds: Synthesis, characterization and insulating properties of potential high k-dielectrics

Materials Science and Engineering: B

Volumn 176, Issue 13, 2011, Pages 965-971

  Schneider, Jörg J ^a   Hoffmann, Rudolf C ^a   Issanin, Alexander ^a   Dilfer, Stefan ^a  

^a DARMSTADT UNIVERSITY OF TECHNOLOGY   (Germany)

Author keywords

Dielectric; h k materials; Hafnium oxide; Thin Films; Zirconium oxide

Indexed keywords

ATOMIC FORCE MICROSCOPY; CHELATION; DEPOSITION; GATE DIELECTRICS; HAFNIUM OXIDES; HIGH RESOLUTION TRANSMISSION ELECTRON MICROSCOPY; HIGH-K DIELECTRIC; OXIDE FILMS; SCANNING ELECTRON MICROSCOPY; SYNTHESIS (CHEMICAL); THIN FILM TRANSISTORS; THIN FILMS; X RAY DIFFRACTION;

CHEMICAL SOLUTION DEPOSITION; COMPOUND SYNTHESIS; H-K MATERIAL; HAFNIUM COMPLEXES; INSULATING PROPERTIES; PRECURSOR COMPOUNDS; SINGLE-SOURCE MOLECULAR PRECURSORS; THIN-FILMS; X- RAY DIFFRACTIONS; ZIRCONIUM COMPLEXES;

ZIRCONIA;

EID: 79960269018     PISSN: 09215107     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.mseb.2011.05.024     Document Type: Article

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