Effects of post plasma treatment on material properties and device characteristics in indium zinc oxide thin film transistors

Thin Solid Films

Volumn 519, Issue 5, 2010, Pages 1573-1577

  Kim, Won ^a   Bang, Jung Hwan ^a   Uhm, Hyun Seok ^a   Lee, Sang Hyuk ^a   Park, Jin Seok ^a  

^a Hanyang University   (South Korea)

Author keywords

Contact resistance; Indium zinc oxide (IZO); Plasma treatment; Surface damage; Thin film transistor (TFT); X ray photoelectron spectroscopy (XPS)

Indexed keywords

AMORPHOUS INDIUM ZINC OXIDE (A-IZO); CHANNEL LAYERS; DEEP ELECTRON TRAPS; DEVICE CHARACTERISTICS; ELECTRICAL RESISTIVITY; FIELD-EFFECT MOBILITIES; INDIUM ZINC OXIDE (IZO); INDIUM ZINC OXIDES; MATERIAL PROPERTY; PLASMA POST-TREATMENT; PLASMA TREATMENT; POST TREATMENT; POST-PLASMA; SURFACE DAMAGE; SURFACE DAMAGES; THIN FILM TRANSISTOR (TFT);

AMORPHOUS FILMS; CONTACT RESISTANCE; ELECTRIC CONDUCTIVITY; ELECTRONS; INDIUM; MATERIALS PROPERTIES; OXIDE FILMS; OXYGEN; OXYGEN VACANCIES; PHOTOELECTRICITY; PHOTONS; PHOTORESISTS; PLASMA APPLICATIONS; PLASMAS; SURFACE TREATMENT; THIN FILMS; VAPOR DEPOSITION; X RAY PHOTOELECTRON SPECTROSCOPY; X RAYS; ZINC; ZINC OXIDE;

THIN FILM TRANSISTORS;

EID: 78649725217     PISSN: 00406090     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.tsf.2010.08.082     Document Type: Conference Paper

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