Indium zinc oxide semiconductor thin films deposited by dc magnetron sputtering at room temperature

Vacuum

Volumn 85, Issue 1, 2010, Pages 22-25

  Li, G F ^a   Zhou, J ^a   Huang, Y W ^a   Yang, M ^a   Feng, J H ^a   Zhang, Q ^a  

^a FUDAN UNIVERSITY   (China)

Author keywords

Alloy target; Indium zinc oxide; Magnetron sputtering; Thin film transistors

Indexed keywords

ALLOY TARGET; CHANNEL LAYERS; DC MAGNETRON SPUTTERING; GLASS SUBSTRATES; INDIUM ZINC OXIDE; INDIUM ZINC OXIDES; MODE OPERATION; ON/OFF RATIO; OXYGEN PARTIAL PRESSURE; ROOM TEMPERATURE; ROOT MEAN SQUARE ROUGHNESS; SATURATION CHARACTERISTIC;

AMORPHOUS FILMS; CERIUM ALLOYS; INDIUM ALLOYS; MAGNETRON SPUTTERING; OXYGEN; SEMICONDUCTING INDIUM; SUBSTRATES; THIN FILM TRANSISTORS; THIN FILMS; VAPOR DEPOSITION; ZINC; ZINC OXIDE;

OXIDE FILMS;

EID: 77955516541     PISSN: 0042207X     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.vacuum.2010.03.004     Document Type: Article

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