Tuning the properties of complex transparent conducting oxides: Role of crystal symmetry, chemical composition, and carrier generation

Physical Review B - Condensed Matter and Materials Physics

Volumn 81, Issue 12, 2010, Pages

  Medvedeva, Julia E ^a   Hettiarachchi, Chaminda L ^a  

^a MISSOURI UNIVERSITY OF SCIENCE AND TECHNOLOGY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 77955156658     PISSN: 10980121     EISSN: 1550235X     Source Type: Journal    
DOI: 10.1103/PhysRevB.81.125116     Document Type: Article

References (77)

1. R. D. Shannon, J. L. Gillson, and R. J. Bouchard, J. Phys. Chem. Solids 38, 877 (1977). 10.1016/0022-3697(77)90126-3
2. K. L. Chopra, S. Major, and D. K. Pandya, Thin Solid Films 102, 1 (1983). 10.1016/0040-6090(83)90256-0
3. A. L. Dawar and J. C. Joshi, J. Mater. Sci. 19, 1 (1984). 10.1007/BF02403106
4. MRS Bull. 25 (2000), special issue on transparent conducting oxides, edited by, D. S. Ginley, and, C. Bright,.
5. H. Kawazoe and K. Ueda, J. Am. Ceram. Soc. 82, 3330 (1999).
6. B. J. Ingram, G. B. Gonzalez, D. R. Kammler, M. I. Bertoni, and T. O. Mason, J. Electroceram. 13, 167 (2004). 10.1007/s10832-004-5094-y
7. H. Un'no, N. Hikuma, T. Omata, N. Ueda, T. Hashimoto, and H. Kawazoe, Jpn. J. Appl. Phys. 32, L1260 (1993). 10.1143/JJAP.32.L1260
8. J. M. Phillips, J. Kwo, and G. A. Thomas, Appl. Phys. Lett. 65, 115 (1994). 10.1063/1.113052
9. A. J. Freeman, K. R. Poeppelmeier, T. O. Mason, R. P. H. Chang, and T. J. Marks, MRS Bull. 25, 45 (2000).
10. M. Orita, M. Takeuchi, H. Sakai, and H. Tanji, Jpn. J. Appl. Phys. 34, L1550 (1995). 10.1143/JJAP.34.L1550
11. K. Nomura, H. Ohta, K. Ueda, T. Kamiya, M. Hirano, and H. Hosono, Science 300, 1269 (2003). 10.1126/science.1083212
12. K. Nomura, H. Ohta, A. Takagi, T. Kamiya, M. Hirano, and H. Hosono, Nature (London) 432, 488 (2004). 10.1038/nature03090
13. H. Hiramatsu, H. Ohta, W. S. Seo, and K. J. Koumoto, J. Jpn. Soc. Powder Powder Metall. 44, 44 (1997).
14. M. Kazeoka, H. Hiramatsu, W. S. Seo, and K. Koumoto, J. Mater. Res. 13, 523 (1998). 10.1557/JMR.1998.0067
15. H. Kaga, R. Asahi, and T. Tani, Jpn. J. Appl. Phys. 43, 3540 (2004) 10.1143/JJAP.43.3540
16. H. Kaga, R. Asahi, and T. Tani, Jpn. J. Appl. Phys. 43, 7133 (2004). 10.1143/JJAP.43.7133
17. K. Nomura, T. Kamiya, H. Ohta, T. Uruga, M. Hirano, and H. Hosono, Phys. Rev. B 75, 035212 (2007). 10.1103/PhysRevB.75.035212
18. J. L. F. Da Silva, Y. Yan, and S.-H. Wei, Phys. Rev. Lett. 100, 255501 (2008). 10.1103/PhysRevLett.100.255501
19. W.-J. Lee, E.-A. Choi, J. Bang, B. Ryu, and K. J. Chang, Appl. Phys. Lett. 93, 111901 (2008). 10.1063/1.2980583
20. D.-Y. Cho, J. Song, K. D. Na, C. S. Hwang, J. H. Jeong, J. K. Jeong, and Y.-G. Mo, Appl. Phys. Lett. 94, 112112 (2009). 10.1063/1.3103323
21. W. Lim, E. A. Douglas, S.-H. Kim, D. P. Norton, S. J. Pearton, F. Ren, H. Shen, and W. H. Chang, Appl. Phys. Lett. 94, 072103 (2009). 10.1063/1.3086394
22. A. Walsh, J. L. F. Da Silva, Y. Yan, M. M. Al-Jassim, and S.-H. Wei, Phys. Rev. B 79, 073105 (2009). 10.1103/PhysRevB.79.073105
23. A. Walsh, J. L. F. Da Silva, and S.-H. Wei, Chem. Mater. 21, 5119 (2009). 10.1021/cm9020113
24. H. Hiramatsu, W. S. Seo, and K. J. Koumoto, Chem. Mater. 10, 3033 (1998). 10.1021/cm980173b
25. T. Moriga, D. R. Kammler, T. O. Mason, G. B. Palmer, and K. R. Poeppelmeier, J. Am. Ceram. Soc. 82, 2705 (1999).
26. M. Orita, H. Ohta, M. Hirano, S. Narushima, and H. Hosono, Philos. Mag. B 81, 501 (2001). 10.1080/13642810110045923
27. H. Kawazoe, N. Ueda, H. Un'no, T. Omata, H. Hosono, and H. Tanoue, J. Appl. Phys. 76, 7935 (1994). 10.1063/1.357904
28. H. Mizoguchi and P. M. Woodward, Chem. Mater. 16, 5233 (2004). 10.1021/cm049249w
29. M. Orita, H. Tanji, M. Mizuno, H. Adachi, and I. Tanaka, Phys. Rev. B 61, 1811 (2000). 10.1103/PhysRevB.61.1811
30. J. E. Medvedeva, Europhys. Lett. 78, 57004 (2007). 10.1209/0295-5075/78/ 57004
31. H. Omura, H. Kumomi, K. Nomura, T. Kamiya, M. Hirano, and H. Hosono, J. Appl. Phys. 105, 093712 (2009). 10.1063/1.3089232
32. E. Wimmer, H. Krakauer, M. Weinert, and A. J. Freeman, Phys. Rev. B 24, 864 (1981). 10.1103/PhysRevB.24.864
33. M. Weinert, E. Wimmer, and A. J. Freeman, Phys. Rev. B 26, 4571 (1982). 10.1103/PhysRevB.26.4571
34. D. M. Bylander and L. Kleinman, Phys. Rev. B 41, 7868 (1990). 10.1103/PhysRevB.41.7868
35. A. Seidl, A. Görling, P. Vogl, J. A. Majewski, and M. Levy, Phys. Rev. B 53, 3764 (1996). 10.1103/PhysRevB.53.3764
36. R. Asahi, W. Mannstadt, and A. J. Freeman, Phys. Rev. B 59, 7486 (1999). 10.1103/PhysRevB.59.7486
37. C. B. Geller, W. Wolf, S. Picozzi, A. Continenza, R. Asahi, W. Mannstadt, A. J. Freeman, and E. Wimmer, Appl. Phys. Lett. 79, 368 (2001). 10.1063/1.1383282
38. M. Y. Kim, R. Asahi, and A. J. Freeman, J. Comput. Aided Mater. Des. 9, 173 (2002). 10.1023/A:1026079901670
39. K. Kato, I. Kawada, N. Kimizuka, and T. Katsura, Z. Kristallogr.. 141, 314 (1975).
40. N. Kimizuka and T. Mohri, J. Solid State Chem. 60, 382 (1985). 10.1016/0022-4596(85)90290-7
41. C. Li, Y. Bando, M. Nakamura, and M. Kimizuka, J. Electron Microsc. (Tokyo) 46, 119 (1997).
42. J. E. Medvedeva, in Transparent Electronics: From Synthesis to Applications, edited by, A. Facchetti, and, T. Marks, (Wiley, New York, 2010).
43. J. E. Medvedeva and A. J. Freeman, Europhys. Lett. 69, 583 (2005). 10.1209/epl/i2004-10386-y
44. S. Jin, Y. Yang, J. E. Medvedeva, J. R. Ireland, A. W. Metz, J. Ni, C. R. Kannewurf, A. J. Freeman, and T. J. Marks, J. Am. Chem. Soc. 126, 13787 (2004). 10.1021/ja0467925
45. Y. Yang, S. Jin, J. E. Medvedeva, J. R. Ireland, A. W. Metz, J. Ni, M. C. Hersam, A. J. Freeman, and T. J. Marks, J. Am. Chem. Soc. 127, 8796 (2005). 10.1021/ja051272a
46. S. Jin, Y. Yang, J. E. Medvedeva, L. Wang, S. Li, N. Cortes, J. R. Ireland, A. W. Metz, J. Ni, M. C. Hersam, A. J. Freeman, and T. J. Marks, Chem. Mater. 20, 220 (2008). 10.1021/cm702588m
47. R. L. Weiher and R. P. Ley, J. Appl. Phys. 37, 299 (1966). 10.1063/1.1707830
48. I. Hamberg, C. G. Granqvist, K. F. Berggren, B. E. Sernelius, and L. Engström, Phys. Rev. B 30, 3240 (1984). 10.1103/PhysRevB.30.3240
49. A. Walsh, J. L. F. Da Silva, S.-H. Wei, C. Körber, A. Klein, L. F. J. Piper, A. De Masi, K. E. Smith, G. Panaccione, P. Torelli, D. J. Payne, A. Bourlange, and R. G. Egdell, Phys. Rev. Lett. 100, 167402 (2008). 10.1103/PhysRevLett.100.167402
50. F. Fuchs and F. Bechstedt, Phys. Rev. B 77, 155107 (2008). 10.1103/PhysRevB.77.155107
51. C. Klingshirn, Phys. Status Solidi B 71, 547 (1975). 10.1002/pssb. 2220710216
52. H. H. Tippins, Phys. Rev. 140, A316 (1965). 10.1103/PhysRev.140.A316
53. N. Ueda, H. Hosono, R. Waseda, and H. Kawazoe, Appl. Phys. Lett. 71, 933 (1997). 10.1063/1.119693
54. N. W. Ashcroft and N. D. Mermin, Solid State Physics (W.B. Saunders, Philadelphia, 1976).
55. J. E. Medvedeva, E. N. Teasley, and M. D. Hoffman, Phys. Rev. B 76, 155107 (2007). 10.1103/PhysRevB.76.155107
56. T. B. Reed, Free energy of Formation of Binary Compounds (MIT Press, Cambridge, Massachusetts, 1971).
57. J. H. W. De Wit, G. van Unen, and M. Lahey, J. Phys. Chem. Solids 38, 819 (1977). 10.1016/0022-3697(77)90117-2
58. F. A. Kröger, The Chemistry of Imperfect Crystals (North-Holland, Amsterdam, 1974).
59. S. Lany and A. Zunger, Phys. Rev. Lett. 98, 045501 (2007). 10.1103/PhysRevLett.98.045501
60. Consistently, a fully compensated oxygen vacancy results in a non-conductive state with the Fermi level located within the fundamental band gap, i.e., between the valence and the conduction bands.
61. The results of the screened-exchange LDA will be published elewhere.
62. J. E. Medvedeva, Phys. Rev. Lett. 97, 086401 (2006). 10.1103/PhysRevLett. 97.086401
63. O. N. Mryasov and A. J. Freeman, Phys. Rev. B 64, 233111 (2001). 10.1103/PhysRevB.64.233111
64. T. Kamiya, K. Nomura, and H. Hosono, Phys. Status Solidi A 206, 860 (2009). 10.1002/pssa.200881303
65. K. Inoue, K. Tominaga, T. Tsuduki, M. Mikawa, and T. Moriga, Vacuum 83, 552 (2008). 10.1016/j.vacuum.2008.04.066
66. Y. Meng, X. Yang, H. Chen, J. Shen, Y. Jiang, Z. Zhang, and Z. Hua, Thin Solid Films 394, 219 (2001) 10.1016/S0040-6090(01)01142-7
67. Y. Meng, X. Yang, H. Chen, J. Shen, Y. Jiang, Z. Zhang, and Z. Hua, J. Vac. Sci. Technol. A 20, 288 (2002). 10.1116/1.1421595
68. Y. Yoshida, D. M. Wood, T. A. Gessert, and T. J. Coutts, Appl. Phys. Lett. 84, 2097 (2004). 10.1063/1.1687984
69. R. B. Dingle, Philos. Mag. 46, 831 (1955).
70. H. Brooks, Adv. Electron. Electron Phys. 7, 85 (1955). 10.1016/S0065-2539(08)60957-9
71. J. R. Bellingham, W. A. Phillips, and C. J. Adkins, J. Mater. Sci. Lett. 11, 263 (1992). 10.1007/BF00729407
72. Note that in contrast to Ti-doped InGaZnO 4 where the Ti d states are located 0.15 eV above the Fermi level, the Zr d states are significantly higher in energy, namely, ∼ 1.0 eV above the Fermi level, and thus are not available for the extra electrons.
73. E. Burstein, Phys. Rev. 93, 632 (1954) 10.1103/PhysRev.93.632
74. T. S. Moss, Proc. Phys. Soc. B 67, 775 (1954). 10.1088/0370-1301/67/10/ 306
75. S.-J. Liu, H.-W. Fang, S.-H. Su, C.-H. Li, J.-S. Cherng, J.-H. Hsieh, and J.-Y. Juang, Appl. Phys. Lett. 94, 092504 (2009). 10.1063/1.3095505
76. G. Frank and H. Köstlin, Appl. Phys. A: Mater. Sci. Process. 27, 197 (1982). 10.1007/BF00619080
77. G. B. González, J. B. Cohen, J. Hwang, T. O. Mason, J. P. Hodges, and J. D. Jorgensen, J. Appl. Phys. 89, 2550 (2001). 10.1063/1.1341209