Magnetic field effect on the terahertz emission from nanometer InGaAs/AlInAs high electron mobility transistors

Journal of Applied Physics

Volumn 97, Issue 11, 2005, Pages

  Dyakonova, N ^a   Teppe, F ^a   Lusakowski J ^a   Knap, W ^a   Levinshtein, M ^b   Dmitriev, A P ^c   Shur, M S ^c   Bollaert, S ^d   Cappy, A ^d  

^a UNIVERSITÉ MONTPELLIER 2   (France)

^b IOFFE INSTITUTE   (Russian Federation)

^c RENSSELAER POLYTECHNIC INSTITUTE   (United States)

^d INSTITUT D ELECTRONIQUE   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ELECTRON MOBILITY TRANSISTORS; EMISSION THRESHOLD; TERAHERTZ EMISSION; TERAHERTZ EMISSION SHIFTS;

MAGNETIC FIELDS; MAGNETORESISTANCE; PLASMA WAVES; RADIATION; SEMICONDUCTING INDIUM GALLIUM ARSENIDE; TRANSISTORS;

ELECTRON MOBILITY;

EID: 20544475856     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1921339     Document Type: Article

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