Terahertz imaging achieved with low-cost CMOS detectors

Laser Focus World

Volumn 47, Issue 7, 2011, Pages 37-41

  Schuster, Franz ^a,b   Knap, Wojciech ^b   Nguyen, Valérie ^a  

^a CEA LETI   (France)

^b UNIV MONTPELLIER   (France)

Author keywords

[No Author keywords available]

Indexed keywords

ANTENNA STRUCTURES; CMOS CHIPS; CMOS DETECTORS; COMPLEMENTARY METAL OXIDE SEMICONDUCTORS; FREE SPACE; IMAGE FREQUENCY; INCIDENT RADIATION; METAL INTERCONNECTIONS; NOISE EQUIVALENT POWER; POWER SENSITIVITY; SIGNAL TO NOISE; SILICON TECHNOLOGIES; SUB-WAVELENGTH; TERA HERTZ; TERAHERTZ IMAGING; TERAHERTZ RADIATION; TERAHERTZ SOURCES;

ANTENNAS; CMOS INTEGRATED CIRCUITS; METALS; RADIATION DETECTORS; SIGNAL TO NOISE RATIO;

TERAHERTZ WAVES;

EID: 79960903949     PISSN: 10438092     EISSN: None     Source Type: Trade Journal    
DOI: None     Document Type: Article

References (3)

1. W. Knap et al., J. Infrared, Millimeter and Terahertz Waves, 30, 1319 (2009).
2. F. Schuster et al., Opt. Exp., 19, 8, 7827 (2011).
3. F. Schuster et al., "A Broadband Terahertz Imager in a Low-cost CMOS Technology", Int. Solid-State Circuits Conf. (2011).