Helicity sensitive terahertz radiation detection by field effect transistors

Journal of Applied Physics

Volumn 111, Issue 12, 2012, Pages

  Drexler, C ^a   Dyakonova, N ^b   Olbrich, P ^a   Karch, J ^a   Schafberger, M ^a   Karpierz, K ^c   Mityagin, Yu ^d   Lifshits, M B ^b,e   Teppe, F ^b   Klimenko, O ^b   Meziani, Y M ^f   Knap, W ^b   Ganichev, S D ^a  

^a UNIVERSITY OF REGENSBURG   (Germany)

^b UNIVERSITÉ MONTPELLIER 2   (France)

^c UNIVERSITY OF WARSAW   (Poland)

^d LEBEDEV PHYSICAL INSTITUTE   (Russian Federation)

^e IOFFE INSTITUTE   (Russian Federation)

^f UNIVERSITY OF SALAMANCA   (Spain)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTION MECHANISM; GAAS/ALGAAS; HELICITIES; LINEAR POLARIZATION; ORDERS OF MAGNITUDE; PHOTORESPONSES; PLASMA EFFECTS; POLARIZATION PARAMETERS; POLARIZATION SENSITIVE; ROOM TEMPERATURE; STOKES PARAMETERS; TERA HERTZ; TERAHERTZ LIGHT; TERAHERTZ RADIATION; TERAHERTZ RADIATION DETECTION;

HIGH ELECTRON MOBILITY TRANSISTORS; PLASMA OSCILLATIONS; TERAHERTZ WAVES;

POLARIZATION;

EID: 84863512591     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4729043     Document Type: Article

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